型号 厂商 描述
mmbz5232b
2 3 4
LITE-ON SEMICONDUCTOR CORP 5.6 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
ma4gp030
2 3
100 V, GALLIUM ARSENIDE, PIN DIODE
ma4e929c-135a
2
SILICON, ZERO BARRIER SCHOTTKY, K BAND, MIXER DIODE
ma4cs102b
2 3 4 5
SILICON, MIXER DIODE
ma4cs102c
2 3 4 5
SILICON, MIXER DIODE
ma4e201l-271
2
SILICON, LOW BARRIER SCHOTTKY, S BAND, MIXER DIODE
ma4e204l-271
2
SILICON, LOW BARRIER SCHOTTKY, C-X BAND, MIXER DIODE
ma4e204m-270
2
SILICON, MEDIUM BARRIER SCHOTTKY, C-X BAND, MIXER DIODE
ma40414-135
2 3 4 5
GALLIUM ARSENIDE, KA BAND, MIXER DIODE
ma4e400h-906
2 3
SILICON, HIGH BARRIER SCHOTTKY, KU BAND, MIXER DIODE
mmsz5237c
GENERAL SEMICONDUCTOR INC 8.2 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
ma44652b-30
2 3 4 5
K BAND, 20 GHz, SILICON, STEP RECOVERY DIODE
ma46483-186a
2 3 4 5
VHF-KA BAND, 6.8 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
ma4st240-1141
2 3 4 5
S BAND, 3.5 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
ma46416-30
2 3 4 5
VHF-KA BAND, 1.8 pF, 18 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
ma46473-120a
2 3 4 5
VHF-KA BAND, 1.2 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
ma46473-95
2 3 4 5
VHF-KA BAND, 1.2 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
ma46474-120
2 3 4 5
VHF-KA BAND, 1.5 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
ma46477-120a
2 3 4 5
VHF-KA BAND, 2.2 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
ma46477-94
2 3 4 5
VHF-KA BAND, 2.2 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
ma46477-97a
2 3 4 5
VHF-KA BAND, 2.2 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
ma46480-94a
2 3 4 5
VHF-KA BAND, 3.7 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
ma4st555-31
2 3
L-KU BAND, 1.8 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
ma4st554-1056
2 3
L-KU BAND, 1.5 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
ma4e190-120
2 3 4
SILICON, HIGH BARRIER SCHOTTKY, KU BAND, MIXER DIODE
ma4e921-135
2 3
SILICON, MEDIUM BARRIER SCHOTTKY, K BAND, MIXER DIODE
mmqa12vt3
2 3 4 5 6 7 8
MOTOROLA INC 150 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
ma4ph151
2 3 4 5
100 V, SILICON, PIN DIODE
mmsz5248b
2 3 4
LITE-ON SEMICONDUCTOR CORP 18 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
mmsz5252b
2 3 4
LITE-ON SEMICONDUCTOR CORP 24 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
mv1404achip
120 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
mv1410bchip
22 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
mv1640b
VHF-UHF BAND, 39 pF, 20 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
mv1650c
VHF-UHF BAND, 100 pF, 20 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
mv1652c
VHF-UHF BAND, 120 pF, 20 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-14
mv1662b
VHF-UHF BAND, 250 pF, 15 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-14
mv1666
VHF-UHF BAND, 330 pF, 15 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-14
mv830b
VHF-UHF BAND, 15 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
mv835
VHF-UHF BAND, 39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
mtzj33c
2 3 4
33 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34
mv1402-3m
360 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-14
mv1406-3m
100 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7
mv1412-3m
10 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7
mv1404b-10mchip
120 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
mv1406b-6mchip
100 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
mv1410-4mchip
22 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
mg064s14a300d
AVX CORP BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
ma40060
2 3 4
SILICON, HIGH BARRIER SCHOTTKY, C BAND, MIXER DIODE
ma1020
2 3 4 5 6 7
PANASONIC CORP 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
ma1024-l
2 3 4 5 6 7
PANASONIC CORP 2.42 V, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35