| 型号 | 厂商 | 描述 |
| m29w040-100k5r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | Excalibur Low-Noise High-Speed Precision Operational Amplifier 8-PDIP 0 to 70 |
| m29w040-150k1r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | Dual Low-Noise High-Speed Precision Operational Amplifier 8-SOIC |
| m29w040-150k1tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | Dual Low-Noise High-Speed Precision Operational Amplifier 8-PDIP |
| m29w040-150k5r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | Dual Low-Noise High-Speed Precision Operational Amplifier 8-PDIP |
| m29w040-150k5tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | Excalibur Low-Noise High-Speed Precision Dual Operational Amplifier 8-SOIC |
| m29w040-150k6r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | Excalibur Low-Noise High-Speed Precision Dual Operational Amplifier 8-SOIC |
| m29w040-150k6tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | Excalibur Low-Noise High-Speed Precision Dual Operational Amplifier 8-SOIC |
| m29w040-150n1r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | Excalibur Low-Noise High-Speed Precision Dual Operational Amplifier 8-SOIC |
| m29w040-150n1tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| m29w040-150n5r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | Excalibur Low-Noise High-Speed Precision Dual Operational Amplifier 8-SOIC |
| m29w040-150n5tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | Excalibur Low-Noise High-Speed Precision Dual Operational Amplifier 8-SOIC |
| m29w040-150n6r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | Excalibur Low-Noise High-Speed Precision Dual Operational Amplifier 8-SOIC |
| m29w040-150n6tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | Excalibur Low-Noise High-Speed Precision Dual Operational Amplifier 8-SOIC |
| m29w040-120k1r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| m29w040-100k6tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | High Speed High Drive Precision Operational Amplifier 8-CDIP -55 to 125 |
| m29w040-100n1tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | High Speed High Drive Precision Operational Amplifier 8-SOIC -55 to 125 |
| m29w040-100n5tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| m29w040-100nz1r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| m29w040-120nz1r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | ; Capacitance:180pF; Capacitance Tolerance:+/- 5 %; Working Voltage, DC:300V; Package/Case:1210; Series:SQ; Dielectric Material:Ceramic; Leaded Process Compatible:Yes; Mounting Type:PCB Surface Mount |
| m29w040-150nz1r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| m29w040-200nz1r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| m29w040-100nz1tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| m29w040-120nz1tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| m29w040-150nz1tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| m29w040-200nz1tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| m29w040-100nz5r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | CAP RF 1.0PF 250V 0603 SMD |
| m29w040-120nz5r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | CAP RF 1.1PF 250V 0603 SMD |
| m29w040-150nz5r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | CAP RF 1.2PF 250V 0603 SMD |
| m29w040-100nz6tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| m29w040-120nz6tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| m29w040-150nz6tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| m29w040-200nz6tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| m29w040-200n5tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | High Speed High Drive Precision Dual Operational Amplifier 8-SOIC |
| m29w040-120n6r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | Dual Low-Noise High-Speed Precision Operational Amplifier 8-SOIC |
| m29w040-120n5r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | Dual Low-Noise High-Speed Precision Operational Amplifier 16-TSSOP |
| m29w040-200n5r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | High Speed High Drive Precision Dual Operational Amplifier 8-SOIC -55 to 125 |
| m29w040-200k6tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | High Speed High Drive Precision Dual Operational Amplifier 8-SOIC |
| m29w040-200k6r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | High Speed High Drive Precision Dual Operational Amplifier 8-SOIC -55 to 125 |
| m29w040-200k5tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | High Speed High Drive Precision Dual Operational Amplifier 8-CDIP -55 to 125 |
| m29w040-200k5r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | High Speed High Drive Precision Dual Operational Amplifier 10-CFP -55 to 125 |
| m29w040-200k1tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | High Speed High Drive Precision Dual Operational Amplifier 20-LCCC -55 to 125 |
| m29w040-200k1r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| m29w160et90n6f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | CLAMP |
| m29w160et90n6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | COLLIER |
| m29w160et90za6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | CLAMP |
| m29w160et90za6e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | CLAMP |
| m29w160et90za6f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | CLAMP |
| m29w160et90za6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | CLAMP |
| m29w160db70za1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory |
| m29w160db70za6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory |