| 型号 | 厂商 | 描述 |
| jan1n2981c 2 3 4 |
Microsemi Corporation | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| jan1n2981d 2 3 4 |
Microsemi Corporation | Dual D-type flip-flop with set and reset; positive-edge trigger - Description: Dual D-Type Flip-Flop with Set and Reset; Positive-Edge Trigger; TTL Enabled ; F<sub>max</sub>: 160 MHz; Logic switching levels: TTL ; Output drive capability: +/- 8 mA ; Power dissipation considerations: Low Power ; Propagation delay: 3.3 ns; Voltage: 4.5-5.5 V |
| jan1n2981r 2 3 4 |
Microsemi Corporation | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| jan1n2981rc 2 3 4 |
Microsemi Corporation | Dual D-type flip-flop with set and reset; positive-edge trigger - Description: Dual D-Type Flip-Flop with Set and Reset; Positive-Edge Trigger; TTL Enabled ; F<sub>max</sub>: 160 MHz; Logic switching levels: TTL ; Output drive capability: +/- 8 mA ; Power dissipation considerations: Low Power ; Propagation delay: 3.3 ns; Voltage: 4.5-5.5 V |
| jan1n2981rd 2 3 4 |
Microsemi Corporation | Quad 2-input EXCLUSIVE-OR gate - Description: Quad 2-Input EXCLUSIVE-OR Gate; TTL Enabled ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: +/- 8 mA ; Power dissipation considerations: Low Power ; Propagation delay: 3.4 ns; Voltage: 4.5-5.5 V |
| jan1n2982 2 3 4 |
MICROSEMI CORP | Quad 2-input EXCLUSIVE-OR gate - Description: Quad 2-Input EXCLUSIVE-OR Gate; TTL Enabled ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: +/- 8 mA ; Power dissipation considerations: Low Power ; Propagation delay: 3.4 ns; Voltage: 4.5-5.5 V |
| jan1n2982a 2 3 4 |
MICROSEMI CORP-LAWRENCE | CERAMIC CHIP/MIL-PRF-55681 |
| jan1n2982b 2 3 4 |
MICROSEMI CORP-LAWRENCE | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| jan1n2982c 2 3 4 |
MICROSEMI CORP | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| jan1n2982d 2 3 4 |
MICROSEMI CORP | Quad 2-input NOR gate - Description: Quad 2-Input NOR Gate ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: +/- 24 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 2.2@3.3V ns; Voltage: 1.65-3.6 |
| jan1n2985rd 2 3 4 |
MICROSEMI CORP | 18-bit registered driver (3-State) - Description: 2.5/3.3V 18-Bit Registered Driver (3-State) ; Logic switching levels: TTL ; Number of pins: 56 ; Output drive capability: Medium ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 2~4 ns; Voltage: Low |
| jan1n2986 2 3 4 |
MICROSEMI CORP-LAWRENCE | 20-bit registered driver with inverted register enable (3-State) - Description: 2.5/3.3V 20-Bit Registered Driver with Inverted Register Enable (3-State) ; Logic switching levels: TTL ; Number of pins: 56 ; Output drive capability: Medium ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 2~4 ns; Voltage: Low |
| jan1n2986a 2 3 4 |
MICROSEMI CORP | Octal buffer/line driver; 3-state - Description: 2.5/3.3V Octal Buffer/Line Driver; Non-Inverting (3-State) ; Logic switching levels: TTL ; Number of pins: 20 ; Output drive capability: +/- 24 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 2.9@3.3V ns; Voltage: 1.65-3.6 |
| jan1n2986b 2 3 4 |
MICROSEMI CORP | Octal buffer/line driver; 3-state - Description: 2.5/3.3V Octal Buffer/Line Driver; Non-Inverting (3-State) ; Logic switching levels: TTL ; Number of pins: 20 ; Output drive capability: +/- 24 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 2.9@3.3V ns; Voltage: 1.65-3.6 |
| jan1n2986c 2 3 4 |
MICROSEMI CORP | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| jan1n2986d 2 3 4 |
MICROSEMI CORP | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| jan1n2986r 2 3 4 |
MICROSEMI CORP | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| jan1n2986rc 2 3 4 |
MICROSEMI CORP | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| jan1n2986rd 2 3 4 |
MICROSEMI CORP | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| jan1n2987 2 3 4 |
Microsemi Corporation | Quad 2-input OR gate - Description: Quad 2-Input OR Gate ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: +/- 24 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 2.0@3.3V ns; Voltage: 1.65-3.6 |
| jan1n2987a 2 3 4 |
Microsemi Corporation | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| jan1n2987b 2 3 4 |
MICROSEMI CORP-SCOTTSDALE | Octal D-type transparent latch; 3-state |
| jan1n2987c 2 3 4 |
Microsemi Corporation | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| jan1n2987d 2 3 4 |
Microsemi Corporation | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| jan1n2987r 2 3 4 |
Microsemi Corporation | Octal D-type flip-flop; positive-edge trigger; 3-state |
| jan1n2987rc 2 3 4 |
Microsemi Corporation | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| jan1n2987rd 2 3 4 |
Microsemi Corporation | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| jan1n2988 2 3 4 |
MICROSEMI CORP | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| jan1n2988a 2 3 4 |
MICROSEMI CORP | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| jan1n2988b 2 3 4 |
MICROSEMI CORP-LAWRENCE | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| jan1n2988c 2 3 4 |
MICROSEMI CORP | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| jan1n2988d 2 3 4 |
MICROSEMI CORP | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| jan1n2988r 2 3 4 |
MICROSEMI CORP-SCOTTSDALE | Octal D-type flip-flop; positive edge trigger; 3-state |
| jan1n2988rc 2 3 4 |
MICROSEMI CORP | Octal D-type flip-flop; positive edge trigger; 3-state - Description: 2.5/3.3V Octal D-Type Flip-Flop, Positive-Edge Trigger (3-State) ; F<sub>max</sub>: 300 MHz; Logic switching levels: TTL ; Number of pins: 20 ; Output drive capability: +/- 24 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 2.5@3.3V ns; Voltage: 1.65-3.6 |
| jan1n2988rd 2 3 4 |
MICROSEMI CORP | Octal D-type flip-flop; positive edge trigger; 3-state - Description: 2.5/3.3V Octal D-Type Flip-Flop, Positive-Edge Trigger (3-State) ; F<sub>max</sub>: 300 MHz; Logic switching levels: TTL ; Number of pins: 20 ; Output drive capability: +/- 24 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 2.5@3.3V ns; Voltage: 1.65-3.6 |
| jan1n2989 2 3 4 |
MICROSEMI CORP-SCOTTSDALE | Dual D-type flip-flop with set and reset; positive-edge trigger - Description: Dual D-Type Flip-Flop with Set and Reset; Positive-Edge Trigger ; F<sub>max</sub>: 425 MHz; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: +/- 24 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 2.3@3.3V ns; Voltage: 1.65-3.6 |
| jan1n2989a 2 3 4 |
MICROSEMI CORP-SCOTTSDALE | Dual D-type flip-flop with set and reset; positive-edge trigger - Description: Dual D-Type Flip-Flop with Set and Reset; Positive-Edge Trigger ; F<sub>max</sub>: 425 MHz; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: +/- 24 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 2.3@3.3V ns; Voltage: 1.65-3.6 |
| jan1n2992 2 3 4 |
MICROSEMI CORP-LAWRENCE | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| jan1n2992a 2 3 4 |
MICROSEMI CORP-SCOTTSDALE | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| jan1n2992b 2 3 4 |
MICROSEMI CORP-LAWRENCE | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| jan1n2992c 2 3 4 |
MICROSEMI CORP | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| jan1n2992d 2 3 4 |
MICROSEMI CORP | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| jan1n2992r 2 3 4 |
MICROSEMI CORP-LAWRENCE | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| jan1n2992rd 2 3 4 |
MICROSEMI CORP | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| jan1n2993 2 3 4 |
MICROSEMI CORP-LAWRENCE | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| jan1n2993a 2 3 4 |
MICROSEMI CORP-SCOTTSDALE | 2.5 V / 3.3 V 16-bit buffer/driver with 30 Ohm termination resistors (3-State) - Description: 2.5/3.3V 16-Bit Buffer/Line Driver; Non-Inverting with Bus Hold and 30 Ohm Termination Resistors (3-State) ; Logic switching levels: TTL ; Number of pins: 48 ; Output drive capability: +/- 12 mA ; Propagation delay: 2.2@3.3V ns; Voltage: 2.3-3.6 V |
| jan1n2993b 2 3 4 |
MICROSEMI CORP | 2.5 V / 3.3 V 16-bit buffer/driver with 30 Ohm termination resistors (3-State) - Description: 2.5/3.3V 16-Bit Buffer/Line Driver; Non-Inverting with Bus Hold and 30 Ohm Termination Resistors (3-State) ; Logic switching levels: TTL ; Number of pins: 48 ; Output drive capability: +/- 12 mA ; Propagation delay: 2.2@3.3V ns; Voltage: 2.3-3.6 V |
| jan1n2993c 2 3 4 |
MICROSEMI CORP | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| jan1n2993d 2 3 4 |
MICROSEMI CORP | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| jan1n2993r 2 3 4 |
MICROSEMI CORP-LAWRENCE | 16-bit inverting buffer/driver; 3-state - Description: 2.5/3.3V 16-Bit Buffer/Line Driver; Inverting with Bus Hold (3-State) ; Logic switching levels: TTL ; Number of pins: 48 ; Output drive capability: -32/+64 mA ; Propagation delay: 1.7@3.3V ns; Voltage: 2.3-3.6 V |