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参数资料
型号： JAN1N2981RC
厂商： Microsemi Corporation
英文描述： Dual D-type flip-flop with set and reset; positive-edge trigger - Description: Dual D-Type Flip-Flop with Set and Reset; Positive-Edge Trigger; TTL Enabled ; F<sub>max</sub>: 160 MHz; Logic switching levels: TTL ; Output drive capability: +/- 8 mA ; Power dissipation considerations: Low Power ; Propagation delay: 3.3 ns; Voltage: 4.5-5.5 V
中文描述： 10瓦稳压二极管
文件页数： 1/4页
文件大小： 215K
代理商： JAN1N2981RC
10 WATT ZENER DIODES
SCOTTSDALE DIVISION
1N2970 thru 1N3015B
and 1N3993 thru 1N4000A
W
M
.
C
1
1
DESCRIPTION
APPEARANCE
These high power 10 W Zener diodes represented by the JEDEC
registered 1N2970 thru 1N3015B and 1N3993 thru 1N4000A series provide
voltage regulation in a selection over a 3.9 V to 200 V broad range of
voltages. They may be operated up to 10 W with adequate mounting and
heat sinking with their low thermal resistance. These Zeners are also
available in JAN, JANTX, JANTXV military qualifications. Microsemi also
offers numerous other Zener products to meet higher and lower power
applications.
DO-4
(DO-203AA)
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
FEATURES
APPLICATIONS / BENEFITS
JEDEC registered 1N2970 thru 1N3015B and
1N3993 thru 1N4000A
Internal solder bond construction
Hermetically sealed (welded)
Zener Voltage 3.9V to 200V.
Also available in JAN, JANTX, and JANTXV
qualifications per MIL-PRF-19500/124 by
adding the JAN, JANTX, or JANTXV prefixes to
part numbers for desired level of screening;
(e.g. JANTX1N2970B, JANTXV1N3996A, etc.
Standard polarity is anode to case (stud) for
1N2970 thru 1N3015B and cathode to case for
1N3993 thru 1N4000A
Reverse polarity is cathode to case for 1N2970
thru 1N3015B and anode to case for 1N3993
thru 1N4000A by designating R suffix, e.g.
1N2970RB, 1N3993RA, etc.
Consult factory for surface mount equivalents
current and temperature range
Standard voltage tolerances are +/- 5% with B
suffix, +/-10% with an A suffix, and +/-20% with
no suffix
Consult factory for +/-2% or +/-1% voltage
tolerance with a C or D suffix respectively
Reverse polarity available
Nonsensitive to ESD per MIL-STD-750 Method
1020
Inherently radiation hard as described in
Microsemi MicroNote 050
Regulates voltage over a broad operating
MAXIMUM RATINGS
Junction Temperatures: -65
o
C to +175
o
C
Storage Temperatures: -65
o
C to +200
o
C
DC Power Dissipation: 10 Watts
Power Derating: 80 mW/
o
C above 50
o
C
Forward Voltage @ 2.0 A: 1.5 Volts
THERMAL RESISTANCE: 10
o
C/W (typical)
junction to case (stud)
Solder temperatures: 260
o
C for 10 s (max)
MECHANICAL AND PACKAGING
CASE: Industry Standard DO-4, (DO-203AA), 7/16”
Hex, stud with 10-32 threads, welded, hermetically
sealed metal and glass
FINISH: All external surfaces are corrosion
resistant and terminal solderable
POLARITY:
1N3993 – 1N4000
: Std. Polarity is
cathode to stud. Reverse polarity (anode to stud)
indicated by suffix “R”
1N2970 – 1N3015
: Std. Polarity is anode to stud.
Reverse polarity indicated by suffix “R”
WEIGHT: 7.5 grams
MOUNTING HARDWARE: Consult factory for
optional insulator, bushing solder terminal,
washers, and nut
See package dimension on last page
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2003
11-12-2003 REV A
相关PDF资料
PDF描述
JAN1N2981RD Quad 2-input EXCLUSIVE-OR gate - Description: Quad 2-Input EXCLUSIVE-OR Gate; TTL Enabled ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: +/- 8 mA ; Power dissipation considerations: Low Power ; Propagation delay: 3.4 ns; Voltage: 4.5-5.5 V
JAN1N2982 Quad 2-input EXCLUSIVE-OR gate - Description: Quad 2-Input EXCLUSIVE-OR Gate; TTL Enabled ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: +/- 8 mA ; Power dissipation considerations: Low Power ; Propagation delay: 3.4 ns; Voltage: 4.5-5.5 V
JAN1N2982A CERAMIC CHIP/MIL-PRF-55681
JAN1N2982B Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
JAN1N2982C Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
相关代理商/技术参数
参数描述
JAN1N2981RD 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:10 WATT ZENER DIODES
JAN1N2982 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:10 WATT ZENER DIODES
JAN1N2982A 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:10 WATT ZENER DIODES
JAN1N2982B 制造商:Microsemi Corporation 功能描述:Diode Zener Single 18V 5% 10W 2-Pin DO-4 制造商:Microsemi Corporation 功能描述:ZENER SGL 18V 5% 10W 2PIN DO-4 - Bulk
JAN1N2982BB 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:10 Watt Zener Diodes Qualified per MIL-PRF-19500/124
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