型号 | 厂商 | 描述 |
jan1n4123urtr 2 |
Microsemi Corporation | Hex D-type flip-flop with reset; positive-edge trigger - Description: Hex D-Type Flip-Flop with Reset; Positive-Edge Trigger ; F<sub>max</sub>: 99 MHz; Logic switching levels: CMOS ; Output drive capability: +/- 5.2 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 17@5V ns; Voltage: 2.0-6.0 V |
jan1n4123urtr-1 2 |
Microsemi Corporation | Hex D-type flip-flop with reset; positive-edge trigger - Description: Hex D-Type Flip-Flop with Reset; Positive-Edge Trigger ; F<sub>max</sub>: 99 MHz; Logic switching levels: CMOS ; Output drive capability: +/- 5.2 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 17@5V ns; Voltage: 2.0-6.0 V |
jan1n4124 2 |
MICROSEMI CORP-SCOTTSDALE | Hex D-type flip-flop with reset; positive-edge trigger - Description: Hex D-Type Flip-Flop with Reset; Positive-Edge Trigger ; F<sub>max</sub>: 99 MHz; Logic switching levels: CMOS ; Output drive capability: +/- 5.2 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 17@5V ns; Voltage: 2.0-6.0 V |
jan1n4124c 2 |
MICROSEMI CORP-SCOTTSDALE | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) |
jan1n4124cur 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4124cur-1 2 |
MICROSEMI CORP-LAWRENCE | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) |
jan1n4124curtr 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4124curtr-1 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4124d 2 |
MICROSEMI CORP-SCOTTSDALE | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) |
jan1n4124dur 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4124dur-1 2 |
MICROSEMI CORP-SCOTTSDALE | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) |
jan1n4126c 2 |
MICROSEMI CORP-SCOTTSDALE | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) |
jan1n4126cur 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4126cur-1 2 |
MICROSEMI CORP-SCOTTSDALE | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) |
jan1n4126curtr 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4126curtr-1 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4126d 2 |
MICROSEMI CORP-SCOTTSDALE | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) |
jan1n4126durtr 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4126durtr-1 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4126ur 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4126ur-1 2 |
MICROSEMI CORP-SCOTTSDALE | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4126urtr 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4126urtr-1 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4127 2 |
MICROSEMI CORP-SCOTTSDALE | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) |
jan1n4127c 2 |
MICROSEMI CORP-SCOTTSDALE | 3-to-8 line decoder, demultiplexer with address latches - Description: 3-to-8 Decoder/Demultiplexer with Address Latches ; Logic switching levels: CMOS ; Output drive capability: +/- 5.2 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 16@5V ns; Voltage: 2.0-6.0 V |
jan1n4127curtr 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4127curtr-1 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4127d 2 |
MICROSEMI CORP-SCOTTSDALE | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) |
jan1n4127durtr 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4127durtr-1 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4127ur 2 |
Microsemi Corporation | Octal buffer/line driver; 3-state; inverting |
jan1n4127ur-1 2 |
MICROSEMI CORP | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) |
jan1n4129durtr 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4129durtr-1 2 |
Microsemi Corporation | Dual 4-input multiplexer; 3-state - Description: Dual 4-Input Multiplexer (3-State) ; Logic switching levels: CMOS ; Number of pins: 16 ; Output drive capability: +/- 7.8 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 17@5V ns; Voltage: 2.0-6.0 V |
jan1n4129ur 2 |
Microsemi Corporation | Dual 4-input multiplexer; 3-state - Description: Dual 4-Input Multiplexer (3-State) ; Logic switching levels: CMOS ; Number of pins: 16 ; Output drive capability: +/- 7.8 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 17@5V ns; Voltage: 2.0-6.0 V |
jan1n4129ur-1 2 |
MICROSEMI CORP-LAWRENCE | Quad 2-input multiplexer; 3-state - Description: Quad 2-Input Multiplexer (3-State) ; Logic switching levels: CMOS ; Number of pins: 16 ; Output drive capability: +/- 7.8 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 11@5V ns; Voltage: 2.0-6.0 V |
jan1n4129urtr 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4129urtr-1 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4130 2 |
MICROSEMI CORP-SCOTTSDALE | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) |
jan1n4130c 2 |
MICROSEMI CORP-SCOTTSDALE | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) |
jan1n4130cur 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4130curtr 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4130curtr-1 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4130d 2 |
MICROSEMI CORP-SCOTTSDALE | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) |
jan1n4130dur 2 |
Microsemi Corporation | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
jan1n4130dur-1 2 |
MICROSEMI CORP | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) |
jan1n4130durtr 2 |
Microsemi Corporation | Octal D-type flip-flop with reset; positive-edge trigger - Description: D-Type Flip-Flop with Reset; Positive-Edge Trigger ; F<sub>max</sub>: 122 MHz; Logic switching levels: CMOS ; Number of pins: 20 ; Output drive capability: +/- 5.2 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 15@5V ns; Voltage: 2.0-6.0 V |
jan1n4130durtr-1 2 |
Microsemi Corporation | Octal D-type flip-flop with reset; positive-edge trigger - Description: D-Type Flip-Flop with Reset; Positive-Edge Trigger ; F<sub>max</sub>: 122 MHz; Logic switching levels: CMOS ; Number of pins: 20 ; Output drive capability: +/- 5.2 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 15@5V ns; Voltage: 2.0-6.0 V |
jan1n4130ur 2 |
Microsemi Corporation | Triple 3-input NOR gate |
jan1n4130urtr 2 |
Microsemi Corporation | Triple 3-input NOR gate - Description: Triple 3-Input NOR Gate ; Logic switching levels: CMOS ; Number of pins: 16 ; Output drive capability: +/- 5.2 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 8@5V ns; Voltage: 2.0-6.0 V |