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参数资料
| 型号： | DBFS15R12YT320 |
| 英文描述： | IGBT Module |
| 中文描述： | IGBT模块 |
| 文件页数： | 2/7页 |
| 文件大小： | 290K |
| 代理商： | DBFS15R12YT320 |
2
Technische Information / technical information
FS100R06KL4
IGBT-Module
IGBT-modules
prepared by: Peter Kanschat
approved by: Robert Severin
date of publication: 2003-9-24
revision: 2.0
Vorlufige Daten
preliminary data
Diode-Wechselrichter / diode-inverter
Hchstzulssige Werte / maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage
TY = 25°C
V￠
600
V
Dauergleichstrom
DC forward current
I
100
A
Periodischer Spitzenstrom
repetitive peak forward current
t = 1 ms
I￠
200
A
Grenzlastintegral
I2t - value
V = 0 V, t = 10 ms, TY = 125°C
I2t
3200
A2s
Charakteristische Werte / characteristic values
min.
typ.
1,25
1,20
max.
1,70
Durchlassspannung
forward voltage
I = 100 A, V = 0 V, TY = 25°C
I = 100 A, V = 0 V, TY = 125°C
V
V
V
Rückstromspitze
peak reverse recovery current
I = 100 A, - di/dt = 4000 A/μs
V = 300 V, V = -15 V, TY = 25°C
V = 300 V, V = -15 V, TY = 125°C
I￠
150
180
A
A
Sperrverzgerungsladung
recovered charge
I = 100 A, -di/dt = 4000 A/μs
V = 300 V, V = -15 V, TY = 25°C
V = 300 V, V = -15 V, TY = 125°C
Q
7,00
12,0
μC
μC
Abschaltenergie pro Puls
reverse recovery energy
I = 100 A, -di/dt = 4000 A/μs
V = 300 V, V = -15 V, TY = 25°C
V = 300 V, V = -15 V, TY = 125°C
Etê
1,90
3,20
mJ
mJ
Innerer Wrmewiderstand
thermal resistance, junction to case
pro Diode
per diode
Rúì
0,55
K/W
NTC-Widerstand / NTC-thermistor
Charakteristische Werte / characteristic values
min.
typ.
max.
Nennwiderstand
rated resistance
T = 25°C
Rè
5,00
k
Abweichung von R
deviation of R
T = 100°C, R = 493
R/R
-5
5
%
Verlustleistung
power dissipation
T = 25°C
Pè
20,0
mW
B-Wert
B-value
Rè = Rè exp [Bè(1/Tè - 1/(298,15 K))]
Bè
3375
K
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