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参数资料
| 型号： | DDC113TU |
| 厂商： | Diodes Inc. |
| 英文描述： | NPN PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR |
| 中文描述： | npn型预偏置信号小的SOT - 363双表面贴装晶体管 |
| 文件页数： | 2/6页 |
| 文件大小： | 101K |
| 代理商： | DDC113TU |
DS30345 Rev. 7 - 2
2 of 6
DDC (xxxx) U
www.diodes.com
Characteristic
Symbol
Min
0.5
0.5
0.3
0.5
0.5
Typ
1.1
1.1
Max
Unit
Test Condition
Input Voltage
DDC124EU
DDC144EU
DDC114YU
DDC123JU
DDC114EU
DDC124EU
DDC144EU
DDC114YU
DDC123JU
DDC114EU
DDC124EU
DDC144EU
DDC114YU
DDC123JU
DDC114EU
DDC124EU
DDC144EU
DDC114YU
DDC123JU
DDC114EU
V
l(off)
1.1
1.9
1.9
V
V
CC
= 5V, I
O
= 100 A
V
l(on)
1.9
3.0
3.0
1.4
1.1
3.0
V
O
= 0.3, I
O
= 5mA
V
O
= 0.3, I
O
= 2mA
V
O
= 0.3, I
O
= 1mA
V
O
= 0.3, I
O
= 5mA
V
O
= 0.3, I
O
= 10mA
I
O
/I
l
= 10mA / 0.5mA
I
O
/I
l
= 10mA / 0.5mA
I
O
/I
l
= 5mA / 0.25mA
I
O
/I
l
= 5mA / 0.25mA
I
O
/I
l
= 10mA / 0.5mA
Output Voltage
V
O(on)
0.1
0.3
V
Input Current
I
l
0.36
0.18
0.88
3.6
0.88
0.5
mA
V
I
= 5V
Output Current
I
O(off)
A
V
CC
= 50V, V
I
= 0V
V
O
= 5V, I
O
= 5mA
V
O
= 5V, I
O
= 5mA
V
O
= 5V, I
O
= 10mA
V
O
= 5V, I
O
= 10mA
V
O
= 5V, I
O
= 5mA
DC Current Gain
DDC124EU
DDC144EU
DDC114YU
DDC123JU
DDC114EU
G
l
56
68
68
80
30
-30
-20
Input Resistor (R
1
) Tolerance
Resistance Ratio Tolerance
R
1
+30
+20
%
R
2
/R
1
Gain-Bandwidth Product*
f
T
250
MHz
V
= 10V, I
E
= 5mA,
f = 100MHz
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
* Transistor - For Reference Only
Characteristic (DDC113TU & DDC143TU &
DDC114TU only)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Symbol
Min
Typ
Max
Unit
Test Condition
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
50
50
5
V
V
V
A
A
I
C
= 50 A
I
C
= 1mA
I
E
= 50 A
V
CB
= 50V
V
EB
= 4V
0.5
0.5
Collector-Emitter Saturation Voltage
V
CE(sat)
0.3
V
I
C
/I
B
= 2.5mA / 0.25mA
I
C
/I
B
= 1mA / 0.1mA DDC114TU
I
C
/I
B
= 10mA / 1mA DDC113TU
I
C
= 1mA, V
CE
= 5V
DDC143TU
DC Current Transfer Ratio
Input Resistor (R
1
) Tolerance
Gain-Bandwidth Product*
h
FE
R
1
f
T
100
-30
250
600
+30
%
250
MHz
V
CE
= 10V, I
E
= -5mA, f = 100MHz
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相关代理商/技术参数 |
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| DDC113TU-7 | 功能描述:开关晶体管 - 偏压电阻器 200MW 1K RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| DDC113TU-7-F | 功能描述:开关晶体管 - 偏压电阻器 200MW 1K RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| DDC114 | 制造商:BB 制造商全称:BB 功能描述:Quad Current Input 20-Bit ANALOG-TO-DIGITAL CONVERTER |
| DDC114EH | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:NPN PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR |
| DDC114EH-7 | 功能描述:开关晶体管 - 偏压电阻器 150MW 10K RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
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