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参数资料
型号： DDTB122TU-7
厂商： DIODES INC
元件分类： 功率晶体管
英文描述： PNP PRE-BIASED 500 mA SOT-323 SURFACE MOUNT TRANSISTOR
中文描述： 500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装： PLASTIC PACKAGE-3
文件页数： 2/3页
文件大小： 70K
代理商： DDTB122TU-7
DS30400 Rev. 2 - 2
2 of 3
DDTB (LO-R1) U
www.diodes.com
Characteristic
Symbol
Min
-0.3
-0.3
Typ
Max
Unit
Test Condition
Input Voltage
DDTB122LU
DDTB142JU
V
l(off)
V
V
CC
= -5V, I
O
= -100 A
DDTB122LU
DDTB142JU
V
l(on)
-2.0
-2.0
-0.3V
-28
-13
-0.5
V
V
O
= -0.3V, I
O
= -20mA
V
O
= -0.3V, I
O
= -20mA
I
O
/I
l
= -50mA/-2.5mA
Output Voltage
V
O(on)
V
Input Current
DDTB122LU
DDTB142JU
I
l
mA
V
I
= -5V
Output Current
I
O(off)
A
V
CC
= -50V, V
I
= 0V
DC Current Gain
DDTB122LU
DDTB142JU
G
l
56
56
V
O
= -5V, I
O
= -50mA
Gain-Bandwidth Product*
f
T
200
MHz
V
= -10V, I
E
= -5mA,
f = 100MHz
Electrical Characteristics R1, R2 Types
@ T
A
= 25 C unless otherwise specified
* Transistor - For Reference Only
Characteristic
Symbol
BV
CBO
BV
CEO
Min
-50
-40
Typ
Max
Unit
V
V
Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage DDTB122TU
DDTB142TU
Collector Cutoff Current
I
C
= -50 A
I
C
= -1mA
I
E
= -50 A
I
E
= -50 A
V
CB
= -50V
BV
EBO
-5
V
I
CBO
-0.5
-0.5
-0.5
-0.3
600
600
A
Emitter Cutoff Current
DDTB122TU
DDTB142TU
I
EBO
A
V
EB
= -4V
Collector-Emitter Saturation Voltage
V
CE(sat)
V
I
C
= -50mA, I
B
= -2.5mA
DC Current Transfer Ratio
DDTB122TU
DDTB142TU
h
FE
100
100
250
250
I
C
= -5mA, V
CE
= -5V
Gain-Bandwidth Product*
f
T
200
MHz
V
= -10V, I
E
= 5mA,
f = 100MHz
Electrical Characteristics R1-Only Types
@ T
A
= 25 C unless otherwise specified
* Transistor - For Reference Only
XXX = Product Type Marking Code
See Sheet 1 Diagrams
YM = Date Code Marking
Y = Year ex: P = 2003
M = Month ex: 9 = September
XXX
Y
Marking Information
Device
Packaging
SOT-323
SOT-323
SOT-323
SOT-323
Shipping
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
DDTB122LU-7
DDTB142JU-7
DDTB122TU-7
DDTB142TU-7
Ordering Information
(Note 3)
Month
Code
Jan
1
Feb
2
March
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Year
Code
2002
N
2003
P
2004
R
2005
S
2006
T
2007
U
2008
V
2009
W
Date Code Key
Notes: 1. If lead-bearing terminal plating is required, please contact your Diodes Inc. sales representative for availability and minimum
order details.
T
C
U
D
O
R
P
W
E
N
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相关代理商/技术参数
参数描述
DDTB122TU-7-F 功能描述:开关晶体管 - 偏压电阻器 200MW 0.22K RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel
DDTB123EC 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:PNP PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR
DDTB123EC-7 功能描述:开关晶体管 - 偏压电阻器 200MW 2.2KW 2.2KW RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel
DDTB123EC-7-F 功能描述:开关晶体管 - 偏压电阻器 200MW 2.2K RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel
DDTB123EU 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:PNP PRE-BIASED 500 mA SOT-323 SURFACE MOUNT TRANSISTOR
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