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| 型号： | DESD5V0S1BLD-7B |
| 厂商： | Diodes Inc |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | TVS DIODE 5V 1CH BI DFN1006-2 |
| 标准包装： | 1 |
| 电压 - 反向隔离（标准值）： | 5V |
| 电压 - 击穿： | 5.5V |
| 功率（瓦特）： | 130W |
| 电极标记： | 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 2-XFDFN |
| 供应商设备封装： | 2-X1-DFN1006 |
| 包装： | 标准包装 |
| 其它名称： | DESD5V0S1BLD-7BDIDKR |
DESD5V0S1BLD
Maximum Ratings @T A = 25°C unless otherwise specified
Characteristic
Peak Pulse Power Dissipation
Peak Pulse Current
ESD Protection – Contact Discharge
ESD Protection – Air Discharge
Symbol
P PP
I PP
V ESD_Contact
V ESD_Air
Value
130
12
±30
±30
Unit
W
A
kV
kV
Conditions
8/20 μ s, Per Fig. 1
8/20 μ s, Per Fig. 1
IEC 61000-4-2 Standard
IEC 61000-4-2 Standard
Thermal Characteristics
Characteristic
Package Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J , T STG
Value
250
500
-65 to +150
Unit
mW
° C/W
° C
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Reverse Standoff Voltage
Channel Leakage Current (Note 6)
Clamping Voltage
Breakdown Voltage
Differential Resistance
Channel Input Capacitance
Symbol
V RWM
I RM
V CL
V BR
R DIF
C T
Min
-
-
-
-
5.5
-
-
Typ
-
5
-
-
-
0.4
35
Max
5
100
10
14
9.5
-
45
Unit
V
nA
V
V
?
pF
Test Conditions
-
V RWM = 5V
I PP = 1A, t p = 8/20 μ S
I PP = 12A, t p = 8/20 μ S
I R = 1mA
I R = 10A, t p = 8/20 μ S
V R = 0V, f = 1MHz
Notes:
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
6. Short duration pulse test used to minimize self-heating effect.
35
f = 1 MHz
100
30
50
25
0
0
20
40
60
20
0
1
2 3 4 5 6
t, TIME ( μ s)
Fig. 1 Pulse Waveform
V R , REVERSE VOLTAGE (V)
Fig. 2 Typical Total Capacitance vs. Reverse Voltage
DESD5V0S1BLD
Document number: DS35650 Rev. 4 - 2
2 of 4
March 2012
? Diodes Incorporated
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