参数资料
型号: DFLS1200-7
厂商: Diodes Inc
文件页数: 1/3页
文件大小: 81K
描述: DIODE SCHOTTKY 1A 200V PWRDI 123
其它图纸: DFL(R,U,S,), SBR(2,3) Series Side
DFL(R,U,S,), SBR(2,3) Series Top
DFL(R,U,S,), SBR(2,3) Series Bottom
标准包装: 1
二极管类型: 肖特基
电压 - (Vr)(最大): 200V
电流 - 平均整流 (Io): 1A
电压 - 在 If 时为正向 (Vf)(最大): 850mV @ 1A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 2µA @ 200V
电容@ Vr, F: 23pF @ 5V,1MHz
安装类型: 表面贴装
封装/外壳: 2-SMD,扁平引线
供应商设备封装: PowerDI? 123
包装: 标准包装
产品目录页面: 1591 (CN2011-ZH PDF)
其它名称: DFLS1200DIDKR
DFLS1200
Document number: DS30628 Rev. 6 - 2
1 of 3
www.diodes.com
October 2008
? Diodes Incorporated
DFLS1200
PowerDI is a registered trademark of Diodes Incorporated.
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER ?
123
PowerDI
Features
?
Guard Ring Die Constructi
on for Transient Protection
?
Low Power Loss, High Efficiency
?
Patented Interlocking Clip Design for High Surge Current
Capacity
?
Lead Free Finish, RoHS Compliant (Note 4)
?
"Green" Molding Compound (No Br, Sb)
?
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
?
Case: PowerDI
?123
?
Case Material: Molded Plastic,
"Green" Molding Compound.
UL Flammability Classification Rating 94V-0
?
Moisture Sensitivity: Level 1 per J-STD-020D
?
Terminal Connections: Cathode Band
?
Terminals: Finish – Matte Ti
n annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
?
Marking Information: See Page 2
?
Ordering Information: See Page 2
?
Weight: 0.01 grams (approximate)
Maximum Ratings
@TA
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
200
V
RMS Reverse Voltage
VR(RMS)
141
V
Average Forward Current
IF(AV)
1.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
40
A
Thermal Characteristics
Characteristic
Symbol Typ
Max
Unit
Thermal Resistance Junction to Ambient (Note 1)
RθJA
132
?
°C/W
Thermal Resistance Junction to Soldering Point (Note 2)
RθJS
?
7
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +175
°C
Electrical Characteristics
@TA
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 3)
V(BR)R
200
?
?
V
IR
= 8
μA
Forward Voltage
VF
?
?
0.85
V
IF
= 1.0A
Leakage Current (Note 3)
IR
?
?
2
μA
VR
= 200V, T
A
= 25
°C
Total Capacitance
CT
?
23
?
pF
VR
= 5VDC, f = 1MHz
Notes: 1. Part mounted on FR-4 board with 2 oz., minimum recommended copper pad layout, which can be found on our website at
http://www.diode
s.com/datasheets/ap02001.pdf. TA
= 25°C
2. Theoretical RθJS
calculated from the top center of the die straig
ht down to the PCB/cathode tab solder junction.
3. Short duration pulse test used to minimize self-heating effect.
4. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.
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