参数资料
| 型号： | DG2005DQ-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | 2.0V SPST ANALOG SWICTH |
| 标准包装： | 2,500 |
| 功能： | 开关 |
| 电路： | 2 x SPST - NC/NO |
| 导通状态电阻： | 2.5 欧姆 |
| 电压电源： | 单电源 |
| 电压 - 电源，单路/双路(±)： | 1.8 V ~ 5.5 V |
| 电流 - 电源： | 20nA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP，8-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | 8-MSOP |
| 包装： | 带卷 (TR) |
DG2003/2004/2005
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71754
S-05298—Rev. B, 17-Dec-01
ABSOLUTE MAXIMUM RATINGS
Reference to GND
V+
-0.3 to +6 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IN, COM, NC, NOa
-0.3 to (V+ + 0.3 V)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Current (Any terminal)
"50 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Current
"200 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(Pulsed at 1 ms, 10% duty cycle)
Storage Temperature (D Suffix)
-65 to 150
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (Packages)b
MSOP-8c
320 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a.
Signals on NC, NO, or COM or IN exceeding V+ will be clamped by
internal diodes. Limit forward diode current to maximum current ratings.
b.
All leads welded or soldered to PC Board.
c.
Derate 6.5 mW/
_C above 25_C
SPECIFICATIONS (V+ = 2.0 V)
Test Conditions
Otherwise Unless Specified
Limits
–40 to 85
_C
Parameter
Symbol
V+ = 2.0 V,
"10%, VIN = 0.4 or 1.6 Ve
Tempa
Minb
Typc
Maxb
Unit
Analog Switch
Analog Signal Ranged
VNO, VNC,
VCOM
Full
0
V+
V
On-Resistance
rON
V+ = 2.0 V, VCOM = 1.0 V, INO, INC = 1 mA
Room
Fulld
7.0
12.5
10.0
16.0
W
rON Flatnessd
rON
Flatness
V+ = 2.0 V, VCOM = 0 to V+, INO, INC = 1 mA
Room
5
W
INO(off),
INC(off)
V+ = 2.2 V
Room
Fulld
–500
–4.0
500
4.0
pA
nA
Switch Off Leakage Currentf
ICOM(off)
V+ = 2.2 V
VNO, VNC = 0.5 V/1.5 V, VCOM = 1.5 V/0.5 V
Room
Fulld
–500
–4.0
500
4.0
pA
nA
Channel-On Leakage Currentf
ICOM(on)
V+ = 2.2 V, VNO, VNC = VCOM = 0.5 V/1.5 V
Room
Fulld
–500
–4.0
500
4.0
pA
nA
Digital Control
Input High Voltage
VINH
Full
1.6
Input Low Voltage
VINL
Full
0.4
V
Input Capacitanced
Cin
Full
5
pF
Input Current
IINL or IINH
VIN = 0 or V+
Full
–1
1
mA
Dynamic Characteristics
Turn-On Time
tON
VNO or VNC = 1.5 V, RL = 300 W, CL = 35 pF
Room
Fulld
30
47
48
Turn-Off Time
tOFF
VNO or VNC = 1.5 V, RL = 300 W, CL = 35 pF
Figures 1 and 2
Room
Fulld
22
37
48
ns
Charge Injectiond
QINJ
CL = 1 nF, VGEN = 0 V, RGEN = 0 W, Figure 3
Room
2
pC
Off-Isolationd
OIRR
W
Room
–61
Crosstalkd
XTALK
RL = 50 W, CL = 5 pF, f = 1 MHz
Room
–67
dB
NO, NC Off Capacitanced
CNO(off),
CNC(off)
VIN = 0 or V+, f = 1 MHz
Room
53
pF
Channel-On Capacitanced
CON
VIN = 0 or V+, f = 1 MHz
Room
110
pF
Power Supply
Power Supply Range
V+
1.8
2.2
V
Power Supply Currentd
I+
0.02
1.0
mA
Power Consumption
PC
VIN = 0 or V+
2.2
mW
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