参数资料
型号: DG212BDY-T1-E3
厂商: Vishay Siliconix
文件页数: 8/14页
文件大小: 0K
描述: IC SWITCH QUAD SPST 16SOIC
标准包装: 1
功能: 开关
电路: 4 x SPST - NO
导通状态电阻: 160 欧姆
电压电源: 单/双电源
电压 - 电源,单路/双路(±): 4.5 V ~ 25 V,±4.5 V ~ 22 V
电流 - 电源: 10µA
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 16-SOIC(0.154",3.90mm 宽)
供应商设备封装: 16-SOIC N
包装: 标准包装
产品目录页面: 1132 (CN2011-ZH PDF)
其它名称: DG212BDY-T1-E3DKR
Document Number: 70040
S11-0179-Rev. J, 07-Feb-11
www.vishay.com
3
Vishay Siliconix
DG211B, DG212B
SPECIFICATIONS
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
VL = 5 V, VIN = 2.4 V, 0.8 V
e
Temp.a
D Suffix
- 40 °C to 85 °C
Unit
Min.b
Typ.c
Max.b
Analog Switch
Analog Signal Ranged
VANALOG
Full
- 15
15
V
Drain-Source
On-Resistance
RDS(on)
VD = ± 10 V, IS = 1 mA
Room
Full
45
85
100
RDS(on) Match
R
DS(on)
Room
2
Source Off Leakage Current
IS(off)
VS = ± 14 V, VD = ± 14 V
Room
Full
- 0.5
- 5
± 0.01
0.5
5
nA
Drain Off Leakage Current
ID(off)
VD = ± 14 V, VS = ± 14 V
Room
Full
- 0.5
- 5
± 0.01
0.5
5
Drain On Leakage Current
ID(on)
VS = VD = ± 14 V
Room
Full
- 0.5
- 10
± 0.02
0.5
10
Digital Control
Input Voltage High
VINH
Full
2.4
V
Input Voltage Low
VINL
Full
0.8
Input Current
IINH or IINL
VINH or VINL
Full
- 1
1
A
Input Capacitance
CIN
Room
5
pF
Dynamic Characteristics
Turn-On Time
tON
VS = 10 V
see figure 2
Room
300
ns
Turn-Off Time
tOFF
Room
200
Charge Injection
Q
CL = 1000 pF, Vgen = 0 V, Rgen = 0
Room
1
pC
Source-Off Capacitance
CS(off)
VS = 0 V, f = 1 MHz
Room
5
pF
Drain-Off Capacitance
CD(off)
Room
5
Channel-On Capacitance
CD(on)
VD = VS = 0 V, f = 1 MHz
Room
16
Off Isolation
OIRR
CL = 15 pF, RL = 50
VS = 1 VRMS, f = 100 kHz
Room
90
dB
Channel-to-Channel Crosstalk
XTALK
Room
95
Power Supply
Positive Supply Current
I+
VIN = 0 or 5 V
Room
Full
10
50
A
Negative Supply Current
I-
Room
Full
- 10
- 50
Logic Supply Current
IL
Room
Full
10
50
Power Supply Range for
Continuous Operation
VOP
Full
± 4.5
± 22
V
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