参数资料
| 型号： | DG2532DQ-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 3/8页 |
| 文件大小： | 0K |
| 描述： | IC SWITCH LV DUAL SPST 10MSOP |
| 标准包装： | 2,500 |
| 功能： | 开关 |
| 电路： | 2 x SPDT - NC/NO |
| 导通状态电阻： | 600 毫欧 |
| 电压电源： | 单电源 |
| 电压 - 电源，单路/双路(±)： | 1.8 V ~ 5.5 V |
| 电流 - 电源： | 1µA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 10-TFSOP，10-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | 10-MSOP |
| 包装： | 带卷 (TR) |
Document Number: 72742
S-71009–Rev. C, 14-May-07
www.vishay.com
3
Vishay Siliconix
DG2531/DG2532
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (V+ = 3 V)
Parameter
Symbol
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %,VIN = 0.5 V or 1.4 V
e
Tempa
Limits
- 40 to 85 °C
Unit
Minb
Typc
Maxb
Dynamic Characteristics
Turn-On Time
tON
VNO or VNC = 2.0 V, RL = 50 Ω, CL = 35 pF
Room
Full
40
70
77
ns
Turn-Off Time
tOFF
Room
Full
35
65
72
Break-Before-Make Time
td
Room
1
4
Charge Injectiond
QINJ
CL = 1 nF, VGEN = 1.5 V, RGEN = 0 Ω
Room
54
pC
Off-Isolationd
OIRR
RL = 50 Ω, CL = 5 pF, f = 100 kHz
Room
- 69
dB
Crosstalkd
XTALK
Room
- 69
NO, NC Off Capacitance
d
CNO(off)
CNC(off)
VIN = 0 or V+, f = 1 MHz
Room
143
pF
Channel-On Capacitanced
CNO(on)
CNC(on)
Room
403
Power Supply
Power Supply Range
V+
1.8
5.5
V
Power Supply Current
I+
VIN = 0 or V+
Full
1.0
A
相关PDF资料 |
PDF描述 |
|---|---|
| DG2536DQ-T1-E3 | IC SWITCH LV DUAL SPST 10MSOP |
| DG2539DQ-T1-GE3 | IC SWITCH |
| DG2599DN-T1-GE4 | IC SWITCH |
| DG2613DX-T1-E3 | IC SWITCH LV SPST SC89-6 |
| DG2618DN-T1-E4 | IC SWITCH LV DUAL SPST 10DFN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DG2535 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:0.35 OHM Low-Voltage Dual SPDT Analog Switch |
| DG2535_08 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:0.35-Ω Low-Voltage Dual SPDT Analog Switch |
| DG2535DN-T1-E3 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:0.35 OHM Low-Voltage Dual SPDT Analog Switch |
| DG2535DN-T1-E4 | 功能描述:模拟开关 IC Low Volt Dual SPDT RoHS:否 制造商:Texas Instruments 开关数量:2 开关配置:SPDT 开启电阻（最大值）:0.1 Ohms 切换电压（最大）: 开启时间（最大值）: 关闭时间（最大值）: 工作电源电压:2.7 V to 4.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:DSBGA-16 |
| DG2535DQ-T1-E3 | 功能描述:模拟开关 IC Low Volt Dual SPDT RoHS:否 制造商:Texas Instruments 开关数量:2 开关配置:SPDT 开启电阻（最大值）:0.1 Ohms 切换电压（最大）: 开启时间（最大值）: 关闭时间（最大值）: 工作电源电压:2.7 V to 4.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:DSBGA-16 |
发布紧急采购，3分钟左右您将得到回复。