参数资料
| 型号： | DG3015DB-T2-E1 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | IC SWITCH LV DUAL 16MICRO FOOT |
| 标准包装： | 3,000 |
| 功能： | 开关 |
| 电路： | 2 x DPDT - NC/NO |
| 导通状态电阻： | 1.2 欧姆 |
| 电压电源： | 单电源 |
| 电压 - 电源，单路/双路(±)： | 2.7 V ~ 3.3 V |
| 电流 - 电源： | 1µA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-WFBGA |
| 供应商设备封装： | 16-Micro Foot? |
| 包装： | 带卷 (TR) |
www.vishay.com
2
Document Number: 72962
S-70853-Rev. C, 30-Apr-07
Vishay Siliconix
DG3015
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Product is End of Life
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. Refer to IPC/JEDEC (J-STD-020B)
c. All bumps welded or soldered to PC Board.
d. Derate 9 mW/°C above 70 °C.
Permanent damage to the device may occur when the ”Absolute Maximum Ratings” are exceeded. These stress ratings do not indicate conditions for which the device
is intended to be functional. Functionality is only guaranteed to the conditions specified by the parametric table within the document.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Limit
Unit
Reference V+ to GND
- 0.3 to + 6
V
IN, COM, NC, NOa
- 0.3 to (V+ + 0.3 V)
Current (Any terminal except NO, NC or COM)
30
mA
Continuous Current (NO, NC or COM)
± 150
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
± 250
Storage Temperature
(D Suffix)
- 65 to 150
°C
Package Solder Reflow Conditionsb
IR/Convection
250
Power Dissipation (Packages)c
MICRO FOOT: 16 Bump (4 x 4 mm)d
719
mW
SPECIFICATIONS (V+ = 3 V)
Parameter
Symbol
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %,VIN = 0.4 V or 2 V
e
Temp.a
Limits
- 40 °C to 85 °C
Unit
Min.b
Typ.c
Max.b
Analog Switch
Analog Signal Ranged
VNO, VNC,
VCOM
Full
0
V+
V
On-Resistance
RON
V+ = 2.7 V, VCOM = 0.2 V/1.5 V
INO, INC = 100 mA
Room
Full
0.80
1.2
1.3
Ω
RON Flatness
RON
Flatness
V+ = 2.7 V, VCOM = 0 to V+,
INO, INC = 100 mA
Room
0.16
RON Match
ΔRON
Room
0.15
Switch Off Leakage Current
INO(off)
INC(off)
V+ = 3.3 V,
VNO, VNC = 1 V/3 V, VCOM = 3 V/1 V
Room
Full
- 2
- 20
2
20
nA
ICOM(off)
Room
Full
- 2
- 20
2
20
Channel-On Leakage Current
ICOM(on)
V+ = 3.3 V, VNO, VNC = VCOM = 1 V/3 V
Room
Full
- 2
- 20
2
20
Digital Control
Input High Voltage
VINH
Full
2
V
Input Low Voltage
VINL
Full
0.4
Input Capacitance
Cin
Full
4
pF
Input Current
IINL or IINH
VIN = 0 or V+
Full
- 1
1
A
Dynamic Characteristics
Turn-On Time
tON
VNO or VNC = 2 V, RL = 300 Ω, CL = 35 pF
Room
Full
40
65
67
ns
Turn-Off Time
tOFF
Room
Full
35
60
62
Break-Before-Make Time
td
Full
1
3
Charge Injectiond
QINJ
CL = 1 nF, VGEN = 0 V, RGEN = 0 Ω
Room
7
pC
Off-Isolationd
OIRR
RL = 50 Ω, CL = 5 pF, f = 1 MHz
Room
- 67
dB
Crosstalkd
XTALK
Room
- 70
NO, NC Off Capacitance
d
CNO(off)
VIN = 0 or V+, f = 1 MHz
Room
63
pF
CNC(off)
Room
67
Channel-On Capacitanced
CNO(on)
Room
200
CNC(on)
Room
196
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