参数资料
型号: DG309BDQ-E3
厂商: Vishay Siliconix
文件页数: 11/16页
文件大小: 0K
描述: IC SWITCH QUAD CMOS 16TSSOP
标准包装: 360
功能: 开关
电路: 4 x SPST - NO
导通状态电阻: 160 欧姆
电压电源: 单/双电源
电压 - 电源,单路/双路(±): 12V,±15V
电流 - 电源: 1µA
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 16-TSSOP(0.173",4.40mm 宽)
供应商设备封装: 16-TSSOP
包装: 管件
www.vishay.com
4
Document Number: 70047
S11-0303-Rev. G, 28-Feb-11
Vishay Siliconix
DG308B, DG309B
Notes:
a. Refer to PROCESS OPTION FLOWCHART .
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONSa (for Single Supply)
Parameter
Symbol
Test Conditions
Unless Specified
V+ = 12 V, V- = 0 V
VIN = 11 V, 3.5 V
f
Temp.b
Typ.c
A Suffix
- 55 °C to 125 °C
D Suffix
- 40 °C to 85 °C
Unit
Min.d
Max.d
Min.d
Max.d
Analog Switch
Analog Signal Rangee
VANALOG
Full
0
12
0
12
V
Drain-Source
On-Resistance
RDS(on)
VD = 3 V, 8 V, IS = 1 mA
Room
Full
90
160
200
160
200
Dynamic Characteristics
Turn-On Time
tON
VS = 8 V, see figure 2
Room
300
ns
Turn-Off Time
tOFF
Room
200
Charge Injection
Q
CL = 1 nF, Vgen = 6 V, Rgen = 0
Room
4
pC
Power Supply
Positive Supply Current
I+
VIN = 0 V or 12 V
Room
Full
1
5
1
5
A
Negative Supply Current
I-
Room
Full
- 1
- 5
- 1
- 5
Power Supply Range for
Continuous Operation
VOP
Full
4
44
4
44
V
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