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参数资料
| 型号： | DG3157ADN-T1-E4 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 3/9页 |
| 文件大小： | 0K |
| 描述： | IC SWITCH SPDT 300MHZ 6-MINIQFN |
| 标准包装： | 1 |
| 功能： | 开关 |
| 电路： | 1 x SPDT |
| 导通状态电阻： | 15 欧姆 |
| 电压电源： | 单电源 |
| 电压 - 电源，单路/双路(±)： | 1.65 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-UFDFN |
| 供应商设备封装： | 6-迷你型QFN |
| 包装： | 标准包装 |
| 其它名称： | DG3157ADN-T1-E4DKR |
Document Number: 68628
S-81944-Rev. C, 25-Aug-08
www.vishay.com
3
Vishay Siliconix
DG3157A, DG3157B
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, nor subjected to production test.
e. VS = input voltage to perform proper function.
f. Guaranteed by design and not production tested. The bus switch propagation delay is a function of the RC time constant contributed by the
on-resistance and the specified load capacitance with an ideal voltage source (zero output impedance) driving the switch.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 3.0 V, VSL = 0.5 V, VSH = 2.0 V
e
Temp.a
Limits
- 40 °C to 85 °C
Unit
Min.b
Typ.c
Max.b
Power Supply
Power Supply Range
V+
Full
1.65
5.5
V
Quiescent Supply Current
I+
V+ = 5.5 V, VA = V+ or GND
Room
Full
1
10
A
AC Electrical Characteristice
Prop Delay Timef
tPHL/tPLH
VA = 0 V
V+ = 1.65 to 1.95 V
Full
1.5
ns
V+ = 2.3 to 2.7 V
Full
0.8
V+ = 3.0 to 3.6 V
Full
0.4
V+ = 4.5 to 5.5 V
Full
0.3
Output Enable Timef
tPZL/tPZH
VLOAD = 2 x V+ for tPZL
VLOAD = 0 V for tPZH
V+ = 1.65 to 1.95 V
Room
Full
27
50
V+ = 2.3 to 2.7 V
Room
Full
15
45
V+ = 3.0 to 3.6 V
Room
Full
10
30
V+ = 4.5 to 5.5 V
Room
Full
725
Output Disable Timef
tPLZ/tPHZ
VLOAD = 2 x V+ for tPLZ
VLOAD = 0 V for tPHZ
V+ = 1.65 to 1.95 V
Room
Full
16
45
V+ = 2.3 to 2.7 V
Room
Full
10
40
V+ = 3.0 to 3.6 V
Room
Full
835
V+ = 4.5 to 5.5 V
Room
Full
621
Break-Before-Make Timed
tBBM
V+ = 1.65 to 1.95 V
Full
0.5
11
V+ = 2.3 to 2.7 V
Full
0.5
6
V+ = 3.0 to 3.65
Full
0.5
4
V+ = 4.5 to 5.5 V
Full
0.5
3
Charge Injectiond
Q
CL = 1 nF, VGEN = 0 V
RGEN = 0 Ω
V+ = 5 V
Room
7
pC
V+ = 3.3 V
Room
5
Off Isolationd
OIRR
RL = 50 Ω, f = 10 MHz
Room
- 57
dB
Crosstalkd
XTALK
Room
- 64
- 3 dB Bandwidthd
BW
RL = 50 Ω
Room
300
MHz
Total Harmonic Distortiond
THD
RL = 600 Ω, 0.5 Vp-p f = 600 Hz - 20 kHz
Room
0.016
%
Capacitance
Control Pin Capacitanced
CS
V+ = 0 V
Room
3.7
pF
B Port Off Capacitanced
CIO-B
V+ = 5 V
Room
7
A Port Capacitance When
Switch Enabled
CIO-A(on)
Room
19
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相关代理商/技术参数 |
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|---|---|
| DG3157B | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Low Voltage, 300-MHz - 3 dB Bandwidth, SPDT Analog Switch with Power Down Protection (2:1 Multiplexer/Demultiplexer Bus Switch) |
| DG3157BDN-T1-E4 | 功能描述:模拟开关 IC SPDT Low Voltage w/ Power Down Prot RoHS:否 制造商:Texas Instruments 开关数量:2 开关配置:SPDT 开启电阻（最大值）:0.1 Ohms 切换电压（最大）: 开启时间（最大值）: 关闭时间（最大值）: 工作电源电压:2.7 V to 4.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:DSBGA-16 |
| DG3157DL | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High-Speed, Low rON, SPDT Analog Switch (2:1 Multiplexer/Demultiplexer Bus Switch) |
| DG3157DL-T1 | 功能描述:模拟开关 IC High Speed SPDT RoHS:否 制造商:Texas Instruments 开关数量:2 开关配置:SPDT 开启电阻（最大值）:0.1 Ohms 切换电压（最大）: 开启时间（最大值）: 关闭时间（最大值）: 工作电源电压:2.7 V to 4.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:DSBGA-16 |
| DG3157DL-T1-E3 | 功能描述:模拟开关 IC High Speed SPDT RoHS:否 制造商:Texas Instruments 开关数量:2 开关配置:SPDT 开启电阻（最大值）:0.1 Ohms 切换电压（最大）: 开启时间（最大值）: 关闭时间（最大值）: 工作电源电压:2.7 V to 4.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:DSBGA-16 |
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