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参数资料
| 型号： | DG406BDN-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 10/16页 |
| 文件大小： | 0K |
| 描述： | IC ANALOG SWITCH SPDT 28PLCC |
| 标准包装： | 1,000 |
| 功能： | 多路复用器 |
| 电路： | 1 x 16:1 |
| 导通状态电阻： | 100 欧姆 |
| 电压电源： | 单/双电源 |
| 电压 - 电源，单路/双路(±)： | 12V，±15V |
| 电流 - 电源： | 30µA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 28-LCC（J 形引线） |
| 供应商设备封装： | 28-PLCC（11.51x11.51） |
| 包装： | 带卷 (TR) |
DG406B, DG407B
www.vishay.com
Vishay Siliconix
S13-2513-Rev. D, 09-Dec-13
3
Document Number: 72552
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Signals on SX, DX or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads soldered or welded to PC board.
c. Derate 8.3 mW/°C above 75 °C.
d. Derate 16 mW/°C above 75 °C.
e. Derate 18 mW/°C above 75 °C.
f. Derate 6 mW/°C above 75 °C.
g. Also applies when V- = GND.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
LIMIT
UNIT
Voltages Referenced to V-
V+ to V-g
44
V
GND to V-
-25
Digital Inputsa, VS, VD
(V-) - 2 to (V+) + 2 or 20 mA,
whichever occurs first
Current (any terminal)
30
mA
Peak Current, S or D (pulsed at 1 ms, 10 % duty cycle max.)
100
Storage Temperature
-65 to 150
°C
Power Dissipation (Package)b
28-Pin Plastic DIPc
625
mW
28-Pin Plastic PLCCc
450
mW
28-Pin Widebody SOICf
450
mW
SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE
SPECIFIED
TEMP.b
TYP.c
D SUFFIX
-40 °C to 85 °C
UNIT
V+ = 15 V, V- = -15 V
MIN.d
MAX.d
VAL = 0.8 V, VAH = 2.4 Vf
Analog Switch
Analog Signal Rangee
VANALOG
Full
-
-15
15
V
Drain-Source
On-Resistance
RDS(on)
VD = ± 10 V, IS = -10 mA
sequence each switch on
Room
45
-
60
Full
45
-
74
RDS(on) Matching Between
Channelsg
R
DS(on)
VD = ± 10 V
Room
5
-
%
Source Off Leakage Current
IS(off)
VS = ± 10 V,
VD = ± 10 V, VEN = 0 V
Room
-
-0.5
0.5
nA
Full
-
-5
5
Drain Off Leakage
Current
DG406B
ID(off)
VD = ± 10 V,
VS = ± 10 V,
VEN = 0 V
Room
-
-1
1
Full
-
-40
40
DG407B
Room
-
-1
1
Full
-
-20
20
Drain On Leakage
Current
DG406B
ID(on)
VS = VD = ± 10 V
sequence each
switch on
Room
-
-1
1
Full
-
-40
40
DG407B
Room
-
-1
1
Full
-
-20
20
Digital Control
Logic High Input Voltage
VINH
Full
-
2.4
-
V
Logic Low Input Voltage
VINL
Full
-
0.8
Logic High Input Current
IAH
VA = 2.4 V, 15 V
Full
-
-1
1
μA
Logic Low Input Current
IAL
VEN = 0 V, 2.4 V, VA = 0 V
Full
-
-1
1
Logic Input Capacitance
Cin
f = 1 MHz
Room
6
-
pF
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相关代理商/技术参数 |
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| DG406BP12 | 制造商:Dynex Semiconductor 功能描述:GTO THYRISTOR |
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