参数资料
型号: DG529AK/883
厂商: VISHAY SILICONIX
元件分类: 多路复用及模拟开关
英文描述: DUAL 4-CHANNEL, DIFFERENTIAL MULTIPLEXER, CDIP18
封装: CERAMIC, DIP-18
文件页数: 6/12页
文件大小: 170K
代理商: DG529AK/883
Document Number: 70068
S11-1029–Rev. D, 23-May-11
www.vishay.com
3
Vishay Siliconix
DG528, DG529
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONSa
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V, WR = 0,
RS = 2.4 V, VIN = 2.4 V, 0.8 F
f
Temp.b
Typ.c
A Suffix
- 55 °C to 125 °C
B, C, D Suffix
- 40 °C to 85 °C
Unit
Min.d
Max.d
Min.d
Max.d
Analog Switch
Analog Signal Rangee
VANALOG
Full
- 15
15
- 15
15
V
Drain-Source
On-Resistance
RDS(on)
VD = ± 10 V, IS = - 200 A
Room
Full
270
400
500
450
550
Greatest Change in RDS(on)
Between Channelsf
R
DS(on)
- 10 V < VS < 10 V
Room
6
%
Source Off Leakage Current
IS(off)
VEN = 0 V, VD = ± 10 V
VS = ± 10 V
Room
Full
± 005
- 1
- 50
1
50
- 5
- 50
5
50
nA
Drain Off Leakage Current
ID(off)
VEN = 0 V, VD = ± 10 V
VS = ± 10 V
DG528
Room
Full
± 0.015
- 10
- 200
10
200
- 20
- 200
20
200
DG529
Room
Full
± 0.008
- 10
- 100
10
100
- 20
- 100
20
100
Drain On Leakage Current
ID(on)
VS = VD = ± 10 V
VEN = 2.4 V
DG528
Room
Full
± 0.03
- 10
- 200
10
200
- 20
- 200
20
200
DG529
Room
Full
± 0.015
- 10
- 100
10
100
- 20
- 100
20
100
Digital Control
Logic Input Current
IAH
VA = 2.4 V
Room
Hot
- 0.002
- 10
- 30
- 10
- 30
A
Input Voltage High
VA = 15 V
Room
Hot
0.006
10
30
10
30
Logic Input Current
Input Voltage Low
IAL
VEN = 0 V, 2.4 V, VA = 0 V
RS = 0 V, WR = 0 V
Room
Hot
- 0.002
- 10
- 30
- 10
- 30
Dynamic Characteristics
Transition Time
tTRANS
See Figure 5
Room
0.6
1
s
Break-Before-Make Interval
tOPEN
See Figure 4
Room
0.2
EN and WR Turn-On Time
tON(EN,WR)
See Figure 6 and 7
Room
1
1.5
EN and WR Turn-Off Time
tOFF(EN,RS)
See Figure 6 and 8
Room
0.4
1
Charge Injection
Q
VS = 0 V, Ry = 0 CL = 10 F
Room
4
pC
Off Isolation
OIRR
VEN = 0 V, RL = 1 kCL = 15 pF
VS = 7 VRMS, f = 500 kHz
Room
68
dB
Logic Imput Capacitance
Cin
f = 1 MHz
Room
2.5
pF
Source Off Capacitance
CS(off)
VEN = 0 V, VD = 0 V, f = 140 kHz
Room
5
Drain Off Capacitance
CD(off)
VEN = 0 V, VD = 0 V
f = 140 kHz
DG528
Room
25
DG529
Room
12
Minimum Input Timing Requirements
Write Pulse Width
tW
Full
300
ns
AX, EN Data Set Up time
tS
Full
180
AX, EN Data Hold Time
tH
Full
30
Reset Pulse Width
tRS
VS = 5 V, See Figure 3
Full
500
Power Supplies
Positive Supply Current
I+
VEN = VA = 0 V
Room
2.5
mA
Negative Supply Current
I-
Room
- 1.5
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