参数资料
型号: DG534ADN-E3
厂商: Vishay Siliconix
文件页数: 12/17页
文件大小: 0K
描述: IC AMP/VIDEO/MUX LP 4/8CH 20PLCC
标准包装: 500
功能: 视频多路复用器
电路: 2 x 2:1
导通状态电阻: 90 欧姆
电压电源: 单/双电源
电压 - 电源,单路/双路(±): 10 V ~ 18 V,±10 V ~ 15 V
电流 - 电源: 600µA
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 20-LCC(J 形引线)
供应商设备封装: 20-PLCC(9x9)
包装: 管件
DG534A/538A
Vishay Siliconix
www.vishay.com
4
Document Number: 70069
S-05734—Rev. G, 29-Jan-02
ABSOLUTE MAXIMUM RATINGS
V+ to GND
–0.3 V to +21 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V+ to V––0.3 V to +21 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V– to GND
–10 V to +0.3 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VL
0 V to (V+) + 0.3 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Digital Inputs
(V–) –0.3 V to (VL) + 0.3 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
or 20 mA, whichever occurs first
VS, VD
(V–) –0.3 V to (V–) + 14 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
or 20 mA, whichever occurs first
Current (any terminal) Continuous
20 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Current(S or D) Pulsed l ms 10% Duty
40 mA
. . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature
(A Suffix)
–65 to 150
_C
. . . . . . . . . . . . . . . . . . .
(D Suffix)
–65 to 125
_C
. . . . . . . . . . . . . . . . . . .
Power Dissipation (Package)a
Plastic DIPb
625 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PLCCc
450 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Sidebrazed
1200 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a.
All leads soldered or welded to PC board.
b.
Derate 8.3 mW/
_C above 75_C.
c.
Derate 6 mW/
_C above 75_C.
d.
Derate 16 mW/
_C above 75_C.
SPECIFICATIONSa
Test Conditions
Unless Otherwise Specified
A Suffix
–55 to 125
_C
D Suffix
–40 to 85
_C
Parameter
Symbol
V+ = 15 V, V– = –3 V, VL = 5 V
WR = 0.8 V, RS, EN= 2 V
Tempb
Typc
Mind
Maxd
Mind
Maxd
Unit
Analog Switch
Analog Signal Rangeg
VANALOG
V– = –5 V
Full
–5
8
–5
8
V
Drain-Source
On-Resistance
rDS(on)
IS = –10 mA, VS = 0 V
Room
Full
45
90
120
90
120
W
Resistance Match
Between Channels
DrDS(on)
VAIL = 0.8 V, VAIH = 2 V
Sequence Each Switch On
Room
9
W
Source Off
Leakage Current
IS(off)
VS = 8 V, VD = 0 V, EN = 0.8 V
Room
Full
0.05
–5
–50
5
50
–5
–50
5
50
Drain Off
Leakage Current
ID(off)
VS = 0 V, VD = 8 V, EN = 0.8 V
Room
Full
0.1
–20
–500
20
500
–20
–100
20
100
nA
Drain On
Leakage Current
ID(on)
VS = VD = 8 V
Room
Full
0.1
–20
–1000
20
1000
–20
–200
20
200
Digital Control
Input Voltage High
VAIH
Full
2
Input Voltage Low
VAIL
Full
0.8
V
Address Input Current
IAI
VAI = 0 V, or 2 V or 5 V
Room
Full
–0.1
–1
–10
1
10
–1
–10
1
10
mA
VAO = 2.7 V
Room
–21
–2.5
Address Output Current
IAO
VAO = 0.4 V
Room
3.5
2.5
mA
Dynamic Characteristics
On State Input
PLCC
Room
28
40
On State Input
Capacitanceg
CS(on)
See Figure 11
DIP
Room
31
45
Off State Input
PLCC
Room
3
5
4
Off State Input
Capacitanceg
CS(off)
DIP
Room
4
5
pF
Off State Output
See Figure 12
PLCC
Room
6
10
8
Off State Output
Capacitanceg
CD(off)
DIP
Room
8
10
Transition Time
tTRANS
Room
Full
160
300
500
300
500
Break-Before-Make
Interval
tOPEN
See Figure 4
Room
Full
80
50
25
50
25
EN, WR Turn On Time
tON
See Figure 2 and 3
Room
Full
150
300
500
300
500
ns
EN, Turn Off Time
tOFF
See Figure 2
Room
Full
105
175
300
175
300
Charge Injection
Qi
See Figure 5
Room
–70
pC
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