参数资料
型号: DG613DY-T1-E3
厂商: Vishay Siliconix
文件页数: 14/15页
文件大小: 0K
描述: IC SWITCH QUAD NO/NC 16-SOIC
标准包装: 1
功能: 开关
电路: 1 x DPDT
导通状态电阻: 45 欧姆
电压电源: 单/双电源
电压 - 电源,单路/双路(±): 10 V ~ 18 V,±10 V ~ 15 V
电流 - 电源: -1µA,1µA
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 16-SOIC(0.154",3.90mm 宽)
供应商设备封装: 16-SOIC N
包装: 标准包装
其它名称: DG613DY-T1-E3DKR
www.vishay.com
8
Document Number: 70057
S11-0154-Rev. I, 31-Jan-11
Vishay Siliconix
DG611, DG612, DG613
TEST CIRCUITS
APPLICATIONS
High-Speed Sample-and-Hold
In a fast sample-and-hold application, the analog switch
characteristics are critical. A fast switch reduces aperture
uncertainty. A low charge injection eliminates offset (step)
errors. A low leakage reduces droop errors. The CLC111, a
fast input buffer, helps to shorten acquisition and settling
times. A low leakage, low dielectric absorption hold capacitor
must
be
used.
Polycarbonate,
polystyrene
and
polypropylene are good choices. The JFET output buffer
reduces droop due to its low input bias current.
(see figure 5.)
Pixel-Rate Switch
Windows, picture-in-picture, title overlays are economically
generated using a high-speed analog switch such as the
DG613. For this application the two video sources must be
sync locked. The glitch-less analog switch eliminates halos.
(see figure 6.)
GaAs FET Drivers
Figure 7 illustrates a high-speed GaAs FET driver. To turn
the GaAs FET on 0 V are applied to its gate via S1, whereas
to turn it off, - 8 V are applied via S2. This high-speed,
low-power driver is especially suited for applications that
require a large number of RF switches, such as phased array
radars.
Figure 3. Charge Injection
CL
1 nF
D
Rg
VO
V+
S
V-
5 V
IN
VL
Vg
- 3 V
GND
+ 15 V
+ 5 V
Figure 4. Crosstalk
S1
D2
S2
VS
1 V, 4 V
VO
IN2
Rg = 50
1 V, 4 V
XTALK Isolation = 20 log
VS
VL
VO
V+
IN1
50
C = RF bypass
RL
D1
- 3 V
GND
V-
NC
C
+ 15 V
C
+ 5 V
C
Figure 5. High-Speed Sample-and-Hold
CLC111
75
+
-
LF356
1/4 DG611
5 V Control
Analog
Input
Input Buffer
S
IN
D
Output Buffer
± 5 V Output
to A/D
+ 5 V
+ 12 V
- 5 V
CHOLD
650 pF Polystyrene
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