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参数资料
| 型号： | DMBT9922 |
| 厂商： | Diodes Inc. |
| 英文描述： | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 中文描述： | 进步党小信号晶体管表面贴装 |
| 文件页数： | 1/1页 |
| 文件大小： | 52K |
| 代理商： | DMBT9922 |
D
S
30126 Rev. 2P-5
1 of 1
DMBT9922
DMBT9922
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Epitaxial Planar Die Construction
Ideal for Medium Power Amplification and
Switching
High Current Gain
Complement to DMBT9022
Characteristic
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
JA
T
j
, T
STG
DMBT9922
-50
-40
-5.0
-100
225
556
-55 to +150
Unit
V
V
V
mA
mW
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
K/W
C
Features
Maximum Ratings
@ T
A
= 25 C unless otherwise specified
A
E
J
L
M
B
C
H
G
D
K
TOP VIEW
C
E
B
Mechanical Data
Case: SOT-23, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: K2S
Weight: 0.008 grams (approx.)
SOT-23
Min
Dim
A
B
C
D
E
G
H
J
K
L
M
All Dimensions in mm
Max
0.37
0.51
1.19
1.40
2.10
2.50
0.89
1.05
0.45
0.61
1.78
2.05
2.65
3.05
0.013
0.15
0.89
1.10
0.45
0.61
0.076
0.178
Notes:
1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width
300 s, duty cycle
2%.
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
-50
-40
-5.0
V
V
V
nA
nA
-I
C
= 50 A, I
E
= 0
-I
C
= 1.0mA, I
B
= 0
-I
E
= 50 A, I
C
= 0
V
CB
= -30V
V
EB
= -4.0V
-500
-500
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
h
FE
300
600
-0.5
I
C
= -1.0mA, V
CE
= -6.0V
I
C
= -50mA, I
B
= -5.0mA
V
CE(SAT)
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
2.0 Typ.
3.5
pF
V
CB
= -12V, f = 1.0MHz, I
E
= 0
V
= -12V, I
C
= -2.0mA,
f = 100MHz
Current Gain-Bandwidth Product
f
T
140 Typ.
MHz
N
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