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参数资料
| 型号： | DMMT5401_1 |
| 厂商： | Diodes Inc. |
| 英文描述： | MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 中文描述： | 匹配进步党小信号晶体管表面贴装 |
| 文件页数： | 1/4页 |
| 文件大小： | 176K |
| 代理商： | DMMT5401_1 |
Lead-free Green
DS30437 Rev. 5 - 2
1 of 4
DMMT5401
www.diodes.com
Diodes Incorporated
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Epitaxial Planar Die Construction
Complementary NPN Type Available (DMMT5551)
Ideal for Low Power Amplification and Switching
Intrinsically Matched PNP Pair (Note 1)
2% Matched Tolerance, h
FE
, V
CE(SAT)
, V
BE(SAT)
Lead Free/RoHS Compliant (Note 4)
"Green" Device, Note 5 and 6
·
·
·
·
·
·
Maximum Ratings
@ T
A
= 25
°
C unless otherwise specified
A
M
J
L
D
F
B C
H
K
C
2
B
2
E
2
B
1
E
1
C
1
Mechanical Data
·
Case: SOT-26
Case Material: Molded Plastic, "Green" Molding
Compound, Note 7. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over
Copper leadframe).
Marking (See Page 2): K4S
Order & Date Code Information: See Page 2
Weight: 0.006 grams (approximate)
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DMMT5401
MATCHED PNP SMALL SIGNAL SURFACE MOUNT
TRANSISTOR
Notes: 1. Built with adjacent die from a single wafer.
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. Maximum combined dissipation.
4. No purposefully added lead.
5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
6. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to
Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
Characteristic
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
q
JA
T
j
, T
STG
Value
-160
-150
-5.0
-200
300
417
-55 to +150
Unit
V
V
V
mA
mW
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 2)
Power Dissipation (Note 2, 3)
Thermal Resistance, Junction to Ambient (Note 2)
Operating and Storage and Temperature Range
°C/W
°
C
SOT-26
Min
Dim
A
B
C
D
F
H
J
K
L
M
Max
Typ
0.35
0.50
0.38
1.50
1.70
1.60
2.70
3.00
2.80
0.95
0.55
2.90
3.10
3.00
0.013 0.10
0.05
1.00
1.30
1.10
0.35
0.55
0.40
0.10
0.20
0.15
a
0
°
8
°
All Dimensions in mm
C
2
E
2
E
1
C
1
B
2
B
1
Features
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| DMN100 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN100-7 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMMT5401-7 | 功能描述:两极晶体管 - BJT MATCHED PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| DMMT5401-7-F | 功能描述:两极晶体管 - BJT MATCHED PNP SM SIGNAL TRANS RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| DMMT5401-TP | 功能描述:TRANSISTOR PNP 200MA 150V SOT363 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 阵列 系列:- 标准包装:10,000 系列:- 晶体管类型:2 NPN（双） 电流 - 集电极 (Ic)（最大）:100mA 电压 - 集电极发射极击穿（最大）:45V Ib、Ic条件下的Vce饱和度（最大）:600mV @ 5mA，100mA 电流 - 集电极截止（最大）:- 在某 Ic、Vce 时的最小直流电流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 频率 - 转换:250MHz 安装类型:表面贴装 封装/外壳:6-TSSOP，SC-88，SOT-363 供应商设备封装:PG-SOT363-6 包装:带卷 (TR) 其它名称:SP000747402 |
| DMMT5551 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| DMMT5551_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
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