参数资料
型号: DMMT5551S-7-F
厂商: DIODES INC
元件分类: 功率晶体管
英文描述: MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
中文描述: 200 mA, 160 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: GREEN, PLASTIC PACKAGE-6
文件页数: 1/4页
文件大小: 101K
代理商: DMMT5551S-7-F
Lead-free Green
DS30436 Rev. 7 - 2
1 of 4
DMMT5551/DMMT5551S
www.diodes.com
Diodes Incorporated
MATCHED NPN SMALL SIGNAL SURFACE MOUNT
TRANSISTOR
Epitaxial Planar Die Construction
Complementary PNP Type Available (DMMT5401)
Ideal for Low Power Amplification and Switching
Intrinsically Matched NPN Pair (Note 1)
2% Matched Tolerance, h
FE
, V
CE(SAT)
, V
BE(SAT)
Lead Free/RoHS Compliant (Note 4)
"Green" Device (Note 5 and 6
)
Characteristic
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
θ
JA
T
j
, T
STG
Value
180
160
6.0
200
300
417
-55 to +150
Unit
V
V
V
mA
mW
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 2)
Power Dissipation (Note 2, 3)
Thermal Resistance, Junction to Ambient (Note 2)
Operating and Storage and Temperature Range
°C/W
°
C
Features
Maximum Ratings
@ T
A
= 25
°
C unless otherwise specified
A
M
J
L
D
F
B C
H
K
Mechanical Data
Case: SOT-26
Case Material: Molded Plastic, "Green" Molding
Compound, Note 7. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over
Copper leadframe).
Marking (See Page 2): K4R & K4T
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approximate)
Notes: 1. Built with adjacent die from a single wafer.
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. Maximum combined dissipation.
4. No purposefully added lead.
5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php..
6. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to
Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
SOT-26
Min
0.35
Dim
A
B
C
D
F
H
J
K
L
M
α
All Dimensions in mm
Max
0.50
Typ
0.38
1.50
1.70
1.60
2.70
2.90
3.00
3.10
2.80
0.95
0.55
3.00
0.013 0.10
0.05
1.00
1.30
1.10
0.35
0.55
0.40
0.10
0
°
0.20
8
°
0.15
C
2
E
1
C
1
B
2
E
2
B
1
C
2
E
2
E
1
B
2
B
1
C
1
DMMT5551
(K4R Marking Code)
DMMT5551S
(K4T Marking Code)
相关PDF资料
PDF描述
DMN100 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN100-7 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2004DWK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2004DWK-7 DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2004K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
相关代理商/技术参数
参数描述
DMMT5551-TP 功能描述:TRANSISTOR NPN 200MA 160V SOT363 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 阵列 系列:- 标准包装:10,000 系列:- 晶体管类型:2 NPN(双) 电流 - 集电极 (Ic)(最大):100mA 电压 - 集电极发射极击穿(最大):45V Ib、Ic条件下的Vce饱和度(最大):600mV @ 5mA,100mA 电流 - 集电极截止(最大):- 在某 Ic、Vce 时的最小直流电流增益 (hFE):200 @ 2mA,5V 功率 - 最大:250mW 频率 - 转换:250MHz 安装类型:表面贴装 封装/外壳:6-TSSOP,SC-88,SOT-363 供应商设备封装:PG-SOT363-6 包装:带卷 (TR) 其它名称:SP000747402
DMN100 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN100_0711 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN100_1 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN100-7 功能描述:MOSFET N-CH 30V 1.1A SC59-3 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件