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参数资料
| 型号： | DMN2004DWK-7 |
| 厂商： | DIODES INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | 540 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | GREEN, ULTRA SMALL, PLASTIC PACKAGE-6 |
| 文件页数： | 1/4页 |
| 文件大小： | 151K |
| 代理商： | DMN2004DWK-7 |
Lead-free Green
DS30935 Rev. 2 - 2
1 of 4
DMN2004DWK
www.diodes.com
Diodes Incorporated
DMN2004DWK
DUAL N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected up to 2KV
"Green" Device (Note 4)
Qualified to AEC-Q101 standards for High Reliability
Maximum Ratings
@ T
A
= 25 C unless otherwise specified
A
M
J
L
D
B C
H
K
G
F
D
2
D
1
G
1
S
2
S
1
G
2
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Marking: See Page 2
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approximate)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
20
V
Gate-Source Voltage
V
GSS
±8
V
Drain Current (Note 1) Steady
State
T
A
= 25 C
T
A
= 85 C
I
D
540
390
mA
Pulsed Drain Current (Note 3)
I
DM
1.5
A
Total Power Dissipation (Note 1)
P
d
200
mW
Thermal Resistance, Junction to Ambient
R
JA
625
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-65 to +150
°C
Note: 1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width 10 S, Duty Cycle 1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
SOT-363
Min
Dim
A
B
C
D
F
H
J
K
L
M
Max
0.10
0.30
1.15
1.35
2.00
2.20
0.65 Nominal
0.30
0.40
1.80
2.20
0.10
0.90
1.00
0.25
0.40
0.10
0.25
0
8°
All Dimensions in mm
S
1
D
1
D
2
S
2
G
1
G
2
ESD protected up to 2KV
N
相关PDF资料 |
PDF描述 |
|---|---|
| DMN2004K | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2004K-7 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2004VK | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2004VK-7 | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2004WK | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN2004K | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2004K_10 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2004K-7 | 功能描述:MOSFET 20V 540mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2004K-7-F | 制造商:TYSEMI 制造商全称:TY Semiconductor Co., Ltd 功能描述:Product specification |
| DMN2004TK | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
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