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参数资料
| 型号： | DMN2004VK |
| 厂商： | Diodes Inc. |
| 英文描述： | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | 双N沟道增强型场效应晶体管 |
| 文件页数： | 1/4页 |
| 文件大小： | 151K |
| 代理商： | DMN2004VK |
Lead-free Green
DS30865 Rev. 2 - 2
1 of 4
DMN2004VK
www.diodes.com
Diodes Incorporated
DMN2004VK
DUAL N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected Gate up to 2 kV
"Green" Device (Note 4)
Qualified to AEC-Q101 Standards for High Reliability
Maximum Ratings
@ T
A
= 25 C unless otherwise specified
A
M
L
B C
H
K
G
D
Mechanical Data
S
1
D
1
D
2
S
2
G
1
G
2
Case: SOT-563
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208
Marking: See Page 2
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approximate)
SOT-563
Min
Dim
A
B
C
D
G
H
K
L
M
Max
Typ
0.15
0.30
0.25
1.10
1.25
1.20
1.55
1.70
1.60
0.50
0.90
1.10
1.00
1.50
1.70
1.60
0.56
0.60
0.60
0.10
0.30
0.20
0.10
0.18
0.11
All Dimensions in mm
ESD protected up to 2kV
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
20
V
Gate-Source Voltage
V
GSS
8
V
Drain Current (Note 1) Steady
State
T
A
= 25°C
T
A
= 85°C
I
D
540
390
mA
Pulsed Drain Current (Note 3)
I
DM
1.5
A
Total Power Dissipation (Note 1)
P
d
250
mW
Thermal Resistance, Junction to Ambient
R
JA
500
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-65 to +150
°C
Note: 1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width 10 S, Duty Cycle 1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
N
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| DMN2004VK-7 | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2004WK | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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| DMN2005DLP4K | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN2004VK_10 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2004VK-7 | 功能描述:MOSFET 20V 540mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2004WK | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN2004WK_09 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN2004WK-7 | 功能描述:MOSFET N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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