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参数资料
| 型号： | DMN2005DLP4K-7 |
| 厂商： | DIODES INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | 200 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | GREEN, ULTRA SMALL, PLASTIC, DFN1310H4, 6 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 213K |
| 代理商： | DMN2005DLP4K-7 |
DMN2005DLP4K
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
N
Features
Low On-Resistance
Very Low Gate Threshold Voltage, 0.9V Max.
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 4)
ESD Protected Gate
Ultra Low Profile Package
Mechanical Data
Case: DFN1310H4-6
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating
94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish
NiPdAu annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Marking: See Page 4
Ordering & Date Code Information: See Page 4
Bottom View
* Dimensions D, K, L, N Repeat 4X
** Dimensions E, M, Z Repeat 2X
DFN1310H4-6
Dim
Min
Max
Typ
A
1.25
1.38
1.30
B
0.95
1.08
1.00
C
0.20
0.30
0.25
D*
-
-
0.10
E**
-
-
0.20
G
-
0.40
-
H
0
0.05
0.20
K*
0.10
0.20
0.15
L*
0.30
0.50
0.40
M**
-
-
0.35
N*
-
-
0.25
Z**
-
-
0.05
All Dimensions in mm
Side View
G
H
B
K
E
C
D
0 1
Top View
DS30801 Rev. 6 - 2
1 of 4
www.diodes.com
DMN2005DLP4K
Diodes Incorporated
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
V
GSS
20
V
Gate-Source Voltage
Drain Current per element (Note 1) Continuous
Pulsed (Note 3)
Total Power Dissipation (Note 1)
±
10
200
250
350
V
I
D
mA
P
d
mW
Thermal Resistance, Junction to Ambient
R
θ
JA
357
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-65 to +150
°C
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width
≤
10
μ
S, Duty Cycle
≤
1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
ESD protected
A
L
N
M
N
S
1
G
S
2
G
2
D
Z
Z
D
2
D
1
相关PDF资料 |
PDF描述 |
|---|---|
| DMN2005K | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005K-7 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005LP4K | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005LP4K-7 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005LPK | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN2005K | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005K_0711 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005K-7 | 功能描述:MOSFET N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2005LP4K | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005LP4K_09 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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