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参数资料
| 型号： | DMN2005DLP4K-7 |
| 厂商： | DIODES INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | 200 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | GREEN, ULTRA SMALL, PLASTIC, DFN1310H4, 6 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 213K |
| 代理商： | DMN2005DLP4K-7 |
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
N
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (per element) (Note 5)
Drain-Source Breakdown Voltage
BV
DSS
20
V
V
GS
= 0V, I
D
= 100
μ
A
Zero Gate Voltage Drain Current
I
DSS
10
μ
A
V
DS
= 17V, V
GS
= 0V
Gate-Source Leakage
I
GSS
±
5
μ
A
V
GS
=
±
8V, V
DS
= 0V
ON CHARACTERISTICS (per element) (Note 5)
Gate Threshold Voltage
V
GS(th)
0.53
40
0.9
V
V
DS
= V
GS
, I
D
= 100
μ
A
V
GS
= 4V, I
= 10mA
V
GS
= 2.7V, I
D
= 200mA
V
GS
= 2.5V, I
D
= 10mA
V
GS
= 1.8V, I
D
= 200mA
V
GS
= 1.5V, I
D
= 1mA
Static Drain-Source On-Resistance
R
DS (ON)
0.9
0.85
1.2
2.4
2.5
1.5
1.7
1.7
3.5
3.5
Ω
Forward Transfer Admittance
Y
fs
mS
V
DS
= 3V, I
D
= 10mA
Notes: 5. Short duration test pulse used to minimize self-heating effect.
0
0
1
2
3
4
V
Fig. 1 Typical Output Characteristics
DRAIN-SOURCE VOLTAGE (V)
,
I
D
,
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
Ta = 25 C
o
V
= 1.0V
GS
V
= 1.2V
GS
V
= 1.4V
GS
V
= 1.6V
GS
V
=1.8V
GS
V
= 2.0V
GS
V
, GATE-SOURCE VOLTAGE (V)
Reverse Drain Current vs. Source-Drain Voltage
Fig. 2
GS
T = 25 C
1
°
T = 5 C
8
T = 25 C
°
T = C
0
°
T = -55 C
°
T = 150 C
°
T , AMBIENT TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage vs. Ambient Temperature
I DRAIN CURRENT(A)
Fig. 4 Static Drain-Source On-State Resistance vs. Drain Current
T = 150 C
°
T =
C
25
°
T =
C
0
°
T =
C
-55
°
T =
C
85
°
T = 125 C
°
DS30801 Rev. 6 - 2
2 of 4
www.diodes.com
DMN2005DLP4K
Diodes Incorporated
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PDF描述 |
|---|---|
| DMN2005K | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005K-7 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005LP4K | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005LP4K-7 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN2005K | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005K_0711 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005K-7 | 功能描述:MOSFET N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2005LP4K | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005LP4K_09 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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