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参数资料
| 型号： | DMN2005LPK |
| 厂商： | Diodes Inc. |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | N沟道增强型场效应管 |
| 文件页数： | 1/4页 |
| 文件大小： | 135K |
| 代理商： | DMN2005LPK |
Lead-free Green
DS30836 Rev. 3 - 1
1 of 4
DMN2005LPK
www.diodes.com
Diodes Incorporated
DMN2005LPK
N-CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
Low On-Resistance
Low Gate Threshold Voltage
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 4)
ESD Protected Gate
Maximum Ratings
@ T
A
= 25 C unless otherwise specified
D
G
H
B C
L
N
A
M
K
Mechanical Data
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
20
V
Gate-Source Voltage
V
GSS
±8
V
Drain Current per element (Note 1)
Continuous
Pulsed (Note 3)
I
D
200
250
mA
Total Power Dissipation (Note 1)
P
d
200
mW
Thermal Resistance, Junction to Ambient
R
JA
625
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-65 to +150
°C
Note: 1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width 10 S, Duty Cycle 1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Case: DFN1006-3
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating
94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals Connections: See Diagram
Terminals: Finish
leadframe. Solderable per MIL-STD-202, Method 208
Matte Tin annealed over Copper
Marking: See Last Page
Ordering & Date Code Information: See Last Page
Features
UNDER DEVELOPMENT
N
DFN1006-3
Min
Dim
A
B
C
D
G
H
K
L
M
N
Max
Typ
0.95
1.075
1.00
0.55
0.675
0.60
0.45
0.55
0.50
0.20
0.30
0.25
0.47
0.53
0.50
0
0.05
0.03
0.10
0.20
0.15
0.20
0.30
0.25
0.35
0.40
All Dimensions in mm
D
S
G
TOP VIEW
ESD protected
Source
Body
Diode
EQUIVALENT CIRCUIT
Gate
Protection
Diode
Gate
Drain
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN2005LPK_0710 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005LPK-7 | 功能描述:MOSFET 20V 200mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2009LSS | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:5SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN2009LSS-13 | 功能描述:MOSFET NMOS SINGLE N-CHANNL 20V 12A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2013UFDE | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:20V N-CHANNEL ENHANCEMENT MODE MOSFET |
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