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参数资料
| 型号： | DMN2005LPK |
| 厂商： | Diodes Inc. |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | N沟道增强型场效应管 |
| 文件页数： | 4/4页 |
| 文件大小： | 135K |
| 代理商： | DMN2005LPK |
UNDER DEVELOPMENT
DS30836 Rev. 3 - 1
4 of 4
DMN2005LPK
www.diodes.com
N
IMPORTANT NOTICE
LIFE SUPPORT
DiodesIncorporatedanditssubsidiariesreservetherighttomakemodifications,enhancements,improvements,correctionsorotherchangeswithoutfurther
noticetoanyproductherein.DiodesIncorporateddoesnotassumeanyliabilityarisingoutoftheapplicationoruseofanyproductdescribedherein;neither
doesitconveyanylicenseunderitspatentrights,northerightsofothers.Theuserofproductsinsuchapplicationsshallassumeallrisksofsuchuseandwill
agreetoholdDiodesIncorporatedandallthecompanieswhoseproductsarerepresentedonourwebsite,harmlessagainstalldamages.
DiodesIncorporatedproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithouttheexpressedwrittenapprovalofthe
PresidentofDiodesIncorporated.
DM
Marking Information
DM = Product Type Marking Code,
Dot Denotes Collector Side
Notes: 6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Device
Packaging
DFN1006-3
Shipping
3000/Tape & Reel
DMN2005LPK-7
Ordering Information
(Note 6)
1000
I , DRAIN CURRENT (mA)
Fig. 11 Forward Transfer Admittance
vs. Drain Current
1
10
100
0.01
0.1
1
|
f
TBD
V
, DRAIN SOURCE VOLTAGE (V)
Fig. 12 Capacitance Variation
DS
0
20
40
60
80
100
120
0
2
4
6
8
10
12 14
16
18
20
C
TBD
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN2005LPK_0710 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005LPK-7 | 功能描述:MOSFET 20V 200mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2009LSS | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:5SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN2009LSS-13 | 功能描述:MOSFET NMOS SINGLE N-CHANNL 20V 12A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2013UFDE | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:20V N-CHANNEL ENHANCEMENT MODE MOSFET |
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