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参数资料
| 型号： | DMN2005LPK |
| 厂商： | Diodes Inc. |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | N沟道增强型场效应管 |
| 文件页数： | 3/4页 |
| 文件大小： | 135K |
| 代理商： | DMN2005LPK |
UNDER DEVELOPMENT
DS30836 Rev. 3 - 1
3 of 4
DMN2005LPK
www.diodes.com
N
I , DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
0.1
1
0.2
0.4
0.6
0.8
1.0
TBD
6
0.2
0.1
0
0.6
0.5
0.4
0.3
0.7
1.0
0.9
0.8
0
V
, GATE-SOURCE
Fig. 6 Static Drain-Source, On-Resistance
vs. Gate-Source Voltage
GS
VOLTAGE (V)
4
2
TBD
I , DRAIN CURRENT (A)
Fig. 7
On-Resistance vs. Drain
Current and Gate Voltage
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0
0.2
0.4
0.6
0.8
1
1.2
TBD
T, JUNCTION TEMPERATURE ( C)
Fig. 8
Static Drain-Source, On-Resistance
vs. Temperature
°
-50
-25
0
25
50
75
100
125
150
0
0.2
0.3
0.5
0.1
0.4
TBD
I
,
C
D
V
Fig. 9 Drain Source Leakage Current
vs. Voltage
,
DS
DRAIN-SOURCE VOLTAGE (V)
0.1
1
10
100
1000
10000
2
4
6
8
10
12
14
16
18
20
TBD
I
,
D
0.001
0.01
0.1
0.5
0
1
1
V
,
SOURCE
Fig. 10 Reverse Drain Current
vs. Source-Drain Voltage
SD
DRAIN-
VOLTAGE (V)
TBD
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN2005LPK_0710 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005LPK-7 | 功能描述:MOSFET 20V 200mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2009LSS | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:5SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN2009LSS-13 | 功能描述:MOSFET NMOS SINGLE N-CHANNL 20V 12A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2013UFDE | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:20V N-CHANNEL ENHANCEMENT MODE MOSFET |
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