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参数资料
| 型号： | DMN2005K-7 |
| 厂商： | DIODES INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | 300 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | GREEN, ULTRA SMALL, PLASTIC PACKAGE-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 219K |
| 代理商： | DMN2005K-7 |
DS30734 Rev. 3 - 2
1 of 4
www.diodes.com
DMN2005K
Diodes Incorporated
DMN2005K
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
N
N
Features
A
E
J
L
TOP VIEW
M
B
C
H
G
D
D
K
Low On-Resistance
Very Low Gate Threshold Voltage, 0.9V Max.
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 4)
ESD Protected Gate
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating
94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish
Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Marking: See Page 4
Ordering & Date Code Information: See Page 4
Weight: 0.008 grams (approximate)
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
α
0
°
8
°
All Dimensions in mm
Source
Body
Diode
Gate
Gate
Protection
Diode
Drain
ESD protected
EQUIVALENT CIRCUIT
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
V
GSS
20
V
Gate-Source Voltage
Drain Current per element (Note 1) Continuous
Pulsed (Note 3)
Total Power Dissipation (Note 1)
±
10
300
600
350
V
I
D
mA
P
d
mW
Thermal Resistance, Junction to Ambient
R
θ
JA
357
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-65 to +150
°C
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width
≤
10
μ
S, Duty Cycle
≤
1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN2005LP4K | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005LP4K_09 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005LP4K-7 | 功能描述:MOSFET 30V 300mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2005LP4K-7-01 | 制造商:Diodes Incorporated 功能描述:MOSFET DUAL N-CHANNEL SOT-363 GREEN 3K - Tape and Reel |
| DMN2005LPK | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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