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参数资料
| 型号： | DMN2004VK |
| 厂商： | Diodes Inc. |
| 英文描述： | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | 双N沟道增强型场效应晶体管 |
| 文件页数： | 4/4页 |
| 文件大小： | 151K |
| 代理商： | DMN2004VK |
DS30865 Rev. 2 - 2
4 of 4
DMN2004VK
www.diodes.com
Ordering Information
Device
Packaging
SOT-563
Shipping
3000/Tape & Reel
DMN2004VK-7
Notes: 6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
NAB = Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
Date Code Key
Month
Code
Jan
1
Feb
2
March
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
NAB YM
S
1
D
2
G
1
D
1
S
2
G
2
Year
Code
2006
T
2007
U
2008
V
2009
W
(Note 6)
IMPORTANT NOTICE
LIFE SUPPORT
DiodesIncorporatedanditssubsidiariesreservetherighttomakemodifications,enhancements,improvements,correctionsorotherchangeswithoutfurther
noticetoanyproductherein.DiodesIncorporateddoesnotassumeanyliabilityarisingoutoftheapplicationoruseofanyproductdescribedherein;neither
doesitconveyanylicenseunderitspatentrights,northerightsofothers.Theuserofproductsinsuchapplicationsshallassumeallrisksofsuchuseandwill
agreetoholdDiodesIncorporatedandallthecompanieswhoseproductsarerepresentedonourwebsite,harmlessagainstalldamages.
DiodesIncorporatedproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithouttheexpressedwrittenapprovalofthe
PresidentofDiodesIncorporated.
N
1000
I , DRAIN CURRENT (mA)
Fig. 11 Forward Transfer Admittance
vs. Drain Current
1
10
100
0.01
0.1
1
|
f
V
= 10V
GS
T =
150 C
°
T =
-55 C
°
T =
85 C
°
T = 25 C
°
V
, DRAIN SOURCE VOLTAGE (V)
Fig. 12 Capacitance Variation
DS
0
20
40
60
80
100
120
0
2
4
6
8
10
12 14
16
18
20
C
f = 1MHz
V
GS
= 0V
C
iss
C
oss
C
rss
相关PDF资料 |
PDF描述 |
|---|---|
| DMN2004VK-7 | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2004WK | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2004WK-7 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005DLP4K | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005DLP4K-7 | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN2004VK_10 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2004VK-7 | 功能描述:MOSFET 20V 540mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2004WK | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN2004WK_09 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN2004WK-7 | 功能描述:MOSFET N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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