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参数资料
| 型号： | DMN2004WK |
| 厂商： | Diodes Inc. |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | N沟道增强型场效应管 |
| 文件页数： | 1/4页 |
| 文件大小： | 148K |
| 代理商： | DMN2004WK |
Lead-free Green
DS30934 Rev. 2 - 2
1 of 4
DMN2004WK
www.diodes.com
Diodes Incorporated
DMN2004WK
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
20
V
Gate-Source Voltage
V
GSS
±8
V
Drain Current (Note 1) Steady
State
T
A
= 25 C
T
A
= 85 C
I
D
540
390
mA
Pulsed Drain Current (Note 3)
I
DM
1.5
A
Total Power Dissipation (Note 1)
P
d
200
mW
Thermal Resistance, Junction to Ambient
R
JA
625
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-65 to +150
°C
Note: 1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width 10 S, Duty Cycle 1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Mechanical Data
A
M
J
L
E
D
B C
H
K
G
G
S
D
Source
EQUIVALENT CIRCUIT
Gate
Protection
Diode
Gate
Drain
N
Case: SOT-323
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Terminals: Finish
Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking: See Last Page
Ordering & Date Code Information: See Last Page
Weight: 0.006 grams (approximate)
Low On-Resistance: R
DS(ON)
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected up to 2KV
"Green" Device (Note 4)
Qualified to AEC-Q101 standards for High Reliability
Features
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
ESD protected up to 2KV
SOT-323
Min
Dim
A
B
C
D
E
G
H
J
K
L
M
Max
0.25
0.40
1.15
1.35
2.00
2.20
0.65 Nominal
0.30
0.40
1.20
1.40
1.80
2.20
0.0
0.10
0.90
1.00
0.25
0.40
0.10
0.18
0
8
All Dimensions in mm
相关PDF资料 |
PDF描述 |
|---|---|
| DMN2004WK-7 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005DLP4K | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005DLP4K-7 | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005K | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005K-7 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN2004WK_09 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN2004WK-7 | 功能描述:MOSFET N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2005DLP4K | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005DLP4K_09 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005DLP4K-7 | 功能描述:MOSFET N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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