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参数资料
| 型号： | DMC2004DWK-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 8/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET DUAL COMPL PAIR SOT-363 |
| 产品变化通告： | Copper Bond Wire Change 3/May/2011 |
| 产品目录绘图： | SOT-23 Package Top SOT-23 Package Side 1 SOT-23 Package Side 2 |
| 标准包装： | 1 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 540mA，430mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 550 毫欧 @ 540mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 150pF @ 16V |
| 功率 - 最大： | 250mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SOT-363 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMC2004DWKDIDKR |
DMC2004DWK
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DMC2004DWK
Document number: DS31114 Rev. 4 - 2
8 of 8
www.diodes.com
September 2007
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMC2004LPK-7 | MOSFET COMPL PAIR 6-DFN |
| DMC2004VK-7 | MOSFET COMPL PAIR SOT-563 |
| DMC2020USD-13 | MOSFET DUAL COMPL PAIR 8SO |
| DMC2038LVT-7 | MOSFET N/P-CH 20V TSOT26 |
| DMC2400UV-7 | MOSFET N P CH 20V SOT563 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMC2004LPK | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMC2004LPK-7 | 功能描述:MOSFET Complementary RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMC2004VK | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMC2004VK-7 | 功能描述:MOSFET 400mW 20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMC201010R | 功能描述:两极晶体管 - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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