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参数资料
| 型号： | DMG1023UV-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH DUAL 20V SOT563 |
| 标准包装： | 1 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.03A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 750 毫欧 @ 430mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 0.62nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 59.76pF @ 16V |
| 功率 - 最大： | 530mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-563，SOT-666 |
| 供应商设备封装： | SOT-563 |
| 包装： | 标准包装 |
| 产品目录页面： | 1578 (CN2011-ZH PDF) |
| 其它名称： | DMG1023UV-7DIDKR |
DMG1023UV
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
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Dual P-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
ESD Protected Up To 3KV
Lead Free By Design/RoHS Compliant (Note 1)
Halogen and Antimony Free "Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
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Case: SOT563
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Terminals: Finish - Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (approximate)
G 1
S 1
D 2
SOT563
S 2
G 2
D 1
ESD PROTECTED TO 3kV
Top View
Bottom View
Top View
Ordering Information (Note 3)
Part Number
DMG1023UV-7
DMG1023UV-13
Case
SOT563
SOT563
Packaging
3,000 / Tape & Reel
10,000 / Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc.`s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
PA1 = Product Type Marking Code
PA1
YM
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2008
V
2009
W
2010
X
2011
Y
2012
Z
2013
A
2014
B
2015
C
2016
D
2017
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMG1023UV
Document number: DS31975 Rev. 6 - 2
1 of 6
www.diodes.com
March 2012
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMG1024UV-7 | MOSFET N-CH DUAL 20V SOT563 |
| DMG1026UV-7 | MOSFET DL N-CH 60V 410MA SOT-563 |
| DMG1029SV-7 | MOSFET N/P-CH 60V 480/320 SOT563 |
| DMG2301U-7 | MOSFET P-CH 20V 2.5A SOT23 |
| DMG2302U-7 | MOSFET N-CH 20V 4.2A SOT23 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMG1024UV | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMG1024UV-7 | 功能描述:MOSFET MOSFET N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMG1026UV | 制造商:Diodes Incorporated 功能描述:MOSFET NN CH W ESD 60V SOT563 制造商:Diodes Incorporated 功能描述:MOSFET, NN CH, W ESD, 60V, SOT563 制造商:Diodes Incorporated 功能描述:MOSFET, NN CH, W ESD, 60V, SOT563; Transistor Polarity:N Channel; Continuous Drain Current Id:410mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:580mW; No. of Pins:6 ;RoHS Compliant: Yes |
| DMG1026UV-7 | 功能描述:MOSFET MOSFET BVDSS: 41V-60 1V-60V,SOT563,3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMG1029SV-7 | 功能描述:MOSFET 60V Comp Pair ENH 1.7 Ohm 10V 500mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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