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参数资料
| 型号： | DMN2005LP4K-7 |
| 厂商： | DIODES INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | 200 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | GREEN, ULTRA SMALL, PLASTIC, DFN1006H4-3, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 213K |
| 代理商： | DMN2005LP4K-7 |
I , DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
T , AMBIENT TEMPERATURE (°C)
Fig. 7 Static Drain-Source, On-Resistance
vs. Ambient Temperature
V
DRAIN-SOURCE VOLTAGE (V)
Fig. 8 Reverse Drain Current
SD,
vs. Source-Drain Voltage
T = 150 C
°
T =
C
85
°
T =
C
25
°
T =
C
A
-55
°
|
f
I , DRAIN CURRENT (A)
Fig. 9 Forward Transfer Admittance vs. Drain Current
C
T
f=1MHz
Ciss
Crss
Coss
N
DS30799 Rev. 2 - 2
3 of 4
www.diodes.com
DMN2005LP4K
Diodes Incorporated
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN2005LP4K-7-01 | 制造商:Diodes Incorporated 功能描述:MOSFET DUAL N-CHANNEL SOT-363 GREEN 3K - Tape and Reel |
| DMN2005LPK | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005LPK_0710 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005LPK-7 | 功能描述:MOSFET 20V 200mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2009LSS | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:5SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET |
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