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参数资料
| 型号： | DMN3010LSS-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 5/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 16A 8-SOIC |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 16A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 9 毫欧 @ 16A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 43.7nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2096pF @ 15V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 带卷 (TR) |
DMN3010LSS
Suggested Pad Layout
X
Dimensions
Z
C
Value (in mm)
5.1
1.27
Z
X
Y
0.41
1.0
C
Y
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DMN3010LSS
Document number: DS31259 Rev. 6 - 2
5 of 5
www.diodes.com
November 2008
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMN3018SSS-13 | MOSFET N CH 30V 7.3A SO-8 |
| DMN3024LK3-13 | MOSFET N-CH 30V 9.78A DPAK |
| DMN3024LSD-13 | MOSFET 2N-CH 30V 5.7A SO8 |
| DMN3024LSS-13 | MOSFET N-CH 30V 6.4A SO8 |
| DMN3024SFG-7 | MOSFET N-CH 30V 7.5A PWRDI3333-8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN3018SSD-13 | 功能描述:MOSFET 30V Dual N-Ch Enh 22mOhm 10V 6.7A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN3018SSS-13 | 功能描述:MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN3020LK3 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN3020LK3-13 | 功能描述:MOSFET ENHANCE MODE MOSFET 30V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN3024LK3 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30V TO252 (DPAK) N-CHANNEL ENHANCEMENT MODE MOSFET |
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