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| 型号： | DMN4060SVT-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 45V 4.8A TSOT26 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 45V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 46 毫欧 @ 4.3A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 22.4nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1287pF @ 25V |
| 功率 - 最大： | 1.2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | TSOT26 |
| 包装： | 标准包装 |
| 其它名称： | DMN4060SVT-7DIDKR |
DMN4060SVT
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
45
±20
Units
V
V
Continuous Drain Current (Note 5) V GS = 10V
Continuous Drain Current (Note 5) V GS = 5V
Maximum Body Diode Forward Current (Note 5)
Pulsed Drain Current (10 μ s pulse, duty cycle = 1%)
Avalanche Current (Note 6) L = 0.1mH
Avalanche Energy (Note 6) L = 0.1mH
Steady
State
t<10s
Steady
State
t<10s
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
I D
I D
I D
I D
I S
I DM
I AR
E AR
4.8
3.8
6.1
4.8
4.1
3.2
5.2
4.1
2.1
30
14.2
10
A
A
A
A
A
A
A
mJ
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
T A = 25°C
T A = 70°C
Steady state
t<10s
T A = 25°C
T A = 70°C
Steady state
t<10s
P D
R θ JA
P D
R θ JA
R θ JC
T J, T STG
1.2
0.75
106
69
1.8
1.1
68
44
20
-55 to +150
W
°C/W
°C/W
W
°C/W
°C/W
°C/W
°C
100
100
80
Single Pulse
R θ JA = 72 ° C/W
R θ JA(t) = r (t) * R θ JA
10
R DS(on)
Limited
P W = 10 μs
T J - T A = P * R θ JA(t)
60
DC
40
1
P W = 10s
P W = 1s
P W = 100ms
P W = 10ms
20
0.1
P W = 1ms
P W = 100μs
0
0.0001 0.001 0.01 0.1 1 10 100 1,000
0.01
0.1
1
10
100
t1, PULSE DURATION TIME (sec)
Fig. 1 Single Pulse Maximum Power Dissipation
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 2 SOA, Safe Operation Area
DMN4060SVT
Document number: DS35702 Rev. 2 - 2
2 of 7
www.diodes.com
February 2012
? Diodes Incorporated
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