- 您现在的位置：买卖IC网 > Datasheet目录407 > DMN4800LSSL-13 (Diodes Inc)MOSFET N-CH 30V 8A SO-8 Datasheet资料下载
参数资料
| 型号： | DMN4800LSSL-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 8A SO-8 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 14 毫欧 @ 8A，10V |
| Id 时的 Vgs(th)（最大）： | 1.6V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 8.7nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 798pF @ 10V |
| 功率 - 最大： | 1.46W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 其它名称： | DMN4800LSSL-13DIDKR |
DMN4800LSSL
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefitss
V (BR)DSS
30V
R DS(on)
14m ? @ V GS = 10V
20m ? @ V GS = 4.5V
I D max
T A = +25°C
8.0A
6.7A
?
?
?
?
?
?
14m ? @ V GS = 10V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
?
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET has been designed to minimize the on-
Mechanical Data
state resistance (R DS(on) ) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
? DC-DC Converters
? Power management functions
?
?
?
?
?
?
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (approximate)
SO-8
Top View
Ordering Information (Note 4)
Part Number
DMN4800LSSL-13
S
S
S
G
Top View
Internal Schematic
Case
SO-8
D
D
D
D
G
D
S
Equivalent circuit
Packaging
2500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. ?
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
8
5
8
5
= Manufacturer’s Marking
N4800LS = Product Type Marking Code
N4800LS
YY WW
N4800LS
YY WW
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
1
4
1
4
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Chengdu A/T Site
Shanghai A/T Site
DMN4800LSSL
Document number: DS35016 Rev. 4 - 2
1 of 6
www.diodes.com
November 2013
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMN5010VAK-7 | MOSFET DUAL N-CH 50V SOT-563 |
| DMN55D0UT-7 | MOSFET N-CH 50V 160MA SOT-523 |
| DMN5L06-7 | MOSFET N-CH 50V 280MA SOT23-3 |
| DMN5L06DMK-7 | MOSFET DUAL N-CHAN 50V SOT-26 |
| DMN5L06DW-7 | MOSFET N-CHAN DUAL 200MW SOT-363 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN5 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN5_10 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN5010VAK-7 | 功能描述:MOSFET Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN55D0UT | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN55D0UT-7 | 功能描述:MOSFET .2W 50V .16A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。