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| 型号： | DMN4800LSSL-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 8A SO-8 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 14 毫欧 @ 8A，10V |
| Id 时的 Vgs(th)（最大）： | 1.6V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 8.7nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 798pF @ 10V |
| 功率 - 最大： | 1.46W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 其它名称： | DMN4800LSSL-13DIDKR |
DMN4800LSSL
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
± 20
Units
V
V
Drain Current (Note 5) V GS = 10V
Steady
State
T A = +25°C
T A = +70°C
I D
8.0
6.4
A
Drain Current (Note 5)
V GS = 10V
Steady
State
T A = +25°C
T A = +70°C
I D
6.7
5.3
A
Pulsed Drain Current (Note 6)
I DM
50
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J, T STG
Value
1.46
86
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
30
?
?
?
?
?
?
1
± 100
V
μ A
nA
V GS = 0V, I D = 250 μ A
V DS = 30V, V GS = 0V
V GS = ± 20V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage (Note 7)
V GS(th)
R DS (ON)
g fs
V SD
0.8
?
?
?
1.2
11
14
8
0.72
1.6
14
20
?
0.94
V
m ?
S
V
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 8A
V GS = 4.5V, I D = 7A
V DS = 10V, I D = 8A
V GS = 0V, I S = 1A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
C iss
C oss
C rss
R G
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
?
?
?
?
?
?
?
?
?
?
?
798
128
122
1.37
8.7
1.7
2.4
5.03
4.50
26.33
8.55
?
?
?
?
?
?
?
?
?
?
?
pF
pF
pF
?
nC
ns
V DS = 10V, V GS = 0V
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1.0MHz
V GS = 5V, V DS = 15V, I D = 9A
V DD = 15V, V GEN = 10V,
R L = 15 ? , R G = 6.0 ? , I D = 1A
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
DMN4800LSSL
Document number: DS35016 Rev. 4 - 2
2 of 6
www.diodes.com
November 2013
? Diodes Incorporated
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