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参数资料
| 型号： | DMP2004DMK-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET DUAL P-CH 20V SOT-26 |
| 产品变化通告： | Copper Bond Wire Change 3/May/2011 |
| 标准包装： | 3,000 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 550mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 900 毫欧 @ 430mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 175pF @ 16V |
| 功率 - 最大： | 500mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 |
| 供应商设备封装： | SOT-26 |
| 包装： | 带卷 (TR) |
DMP2004DMK
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Pulsed Drain Current
Characteristic
Symbol
V DSS
V GSS
I D
I DM
Value
-20
±8
-550
-1.9
Units
V
V
mA
A
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J, T STG
Value
500
250
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
IDSS
I GSS
-20
?
?
?
?
?
?
-1.0
± 1.0
V
μ A
μ A
V GS = 0V, I D = -250 μ A
V DS = -20V, V GS = 0V
V GS = ± 4.5V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
V GS(th)
R DS (ON)
-0.5
?
?
0.7
1.1
-1.0
0.9
1.4
V
Ω
V DS = V GS , I D = -250 μ A
V GS = -4.5V, I D = -430mA
V GS = -2.5V, I D = -300mA
1.7
2.0
V GS = -1.8V, I D = -150mA
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
|Y fs |
V SD
200
-0.5
?
?
?
-1.2
mS
V
V DS =10V, I D = -0.2A
V GS = 0V, I S = 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
?
?
?
?
?
?
175
30
20
pF
pF
pF
V DS = -16V, V GS = 0V
f = 1.0MHz
Notes:
5.
6.
Device mounted on FR-4 PCB.
Short duration pulse test used to minimize self-heating effect.
DMP2004DMK
Document number: DS30939 Rev. 4 - 2
2 of 5
www.diodes.com
August 2012
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMP2004DWK-7 | MOSFET DUAL P-CH 20V SOT-363 |
| DMP2004K-7 | MOSFET P-CH 20V 600MA SOT23-3 |
| DMP2004TK-7 | MOSFET P-CH 20V 430MA SOT-523 |
| DMP2004VK-7 | MOSFET P-CH DUAL 530MA SOT-563 |
| DMP2004WK-7 | MOSFET P-CH 20V 400MA SC70-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMP2004DWK | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMP2004DWK-7 | 功能描述:MOSFET Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMP2004K | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMP2004K-7 | 功能描述:MOSFET P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMP2004TK | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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