参数资料
型号: DMP2004DMK-7
厂商: Diodes Inc
文件页数: 3/5页
文件大小: 0K
描述: MOSFET DUAL P-CH 20V SOT-26
产品变化通告: Copper Bond Wire Change 3/May/2011
标准包装: 3,000
FET 型: 2 个 P 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 550mA
开态Rds(最大)@ Id, Vgs @ 25° C: 900 毫欧 @ 430mA,4.5V
Id 时的 Vgs(th)(最大): 1V @ 250µA
输入电容 (Ciss) @ Vds: 175pF @ 16V
功率 - 最大: 500mW
安装类型: 表面贴装
封装/外壳: SOT-23-6
供应商设备封装: SOT-26
包装: 带卷 (TR)
DMP2004DMK
0
0
-V DS , DRAIN SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
-V GS , GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
T A , AMBIENT TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage vs. Ambient Temperature
-I D , DRAIN-SOURCE CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
-I D , DRAIN-SOURCE CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance vs.
Drain Current
-I D , DRAIN-SOURCE CURRENT (A)
Fig. 6 Static Drain-Source On-Resistance vs.
Drain-Source Current vs. Gate Source Voltage
10
DMP2004DMK
Document number: DS30939 Rev. 4 - 2
3 of 5
www.diodes.com
August 2012
? Diodes Incorporated
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相关代理商/技术参数
参数描述
DMP2004DWK 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMP2004DWK-7 功能描述:MOSFET Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP2004K 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMP2004K-7 功能描述:MOSFET P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP2004TK 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR