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| 型号： | DMP2215L-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 2.7A SOT23-3 |
| 产品变化通告： | Wire Change 23/May/2008 Encapsulate Change 15/May/2008 |
| 产品目录绘图： | SOT-23 Package Top SOT-23 Package Side 1 SOT-23 Package Side 2 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 100 毫欧 @ 2.7A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.25V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5.3nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 250pF @ 10V |
| 功率 - 最大： | 1.08W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMP2215LDIDKR |
DMP2215L
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
Mechanical Data
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Low On-Resistance:
R DS(ON) < 100m ? @ V GS = -4.5V, I D = -2.7A
R DS(ON) < 215m ? @ V GS = -2.5V, I D = -2.0A
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 4)
Qualified to AEC-Q101 Standards for High Reliability
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Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish ? Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.008 grams (approximate)
SOT-23
Drain
D
Gate
Source
G
S
TOP VIEW
EQUIVALENT CIRCUIT
TOP VIEW
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-20
±12
Units
V
V
Drain Current (Note 1)
Pulsed Drain Current (Note 3)
Steady
State
T A = 25 ° C
T A = 70 ° C
I D
I DM
-2.7
-2
8
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient @T A = 25°C (Note 1)
Operating and Storage Temperature Range
Device mounted on FR-4 PCB. t ≤ 5 sec.
Notes:
1.
2.
No purposefully added lead.
Pulse width ≤ 10 μ S, Duty Cycle ≤ 1%.
3.
Symbol
P D
R θ JA
T J, T STG
Value
1.08
115
-55 to +150
Units
W
°C/W
°C
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMP2215L
Document number: DS31125 Rev. 7 - 2
1 of 5
www.diodes.com
July 2009
? Diodes Incorporated
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相关代理商/技术参数 |
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| DMP2225L | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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| DMP2225LQ-7 | 制造商:TYSEMI 制造商全称:TY Semiconductor Co., Ltd 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET Low Input/Output Leakage |
| DMP2240UDM | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMP2240UDM-7 | 功能描述:MOSFET Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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