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| 型号： | DMP3130L-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 3.5A SOT-23 |
| 产品目录绘图： | SOT-23 Package Top SOT-23 Package Side 1 SOT-23 Package Side 2 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 77 毫欧 @ 4.2A，10V |
| Id 时的 Vgs(th)（最大）： | 1.3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 12nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 432pF @ 15V |
| 功率 - 最大： | 1.4W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1578 (CN2011-ZH PDF) |
| 其它名称： | DMP3130LDIDKR |
DMP3130L
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-30
? 12
Units
V
V
Continuous Drain Current (Note 5) V GS = -4.5V
Steady
State
t<10s
T A = 25 ? C
T A = 70 ? C
T A = 25 ? C
T A = 70 ? C
I D
I D
-3.5
-2.6
-4.1
-3.2
A
A
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10 μ s pulse, duty cycle = 1%)
I S
I DM
-1.6
-20
A
A
Thermal Characteristics
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
T A = 25°C
T A = 70°C
Steady State
t<10s
T A = 25°C
T A = 70°C
Steady State
t<10s
P D
R ? JA
P D
R ? JA
R ? JC
T J, T STG
0.7
0.4
184
115
1.3
0.8
94
61
25
-55 to 150
W
°C/W
W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BV DSS
I DSS
I GSS
-30
?
?
?
?
?
?
-1
? 100
V
μ A
nA
V GS = 0V, I D = -250 μ A
V DS = -30V, V GS = 0V
V GS = ±12V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V GS(th)
-0.6
?
-1.3
V
V DS = V GS , I D = -250 μ A
?
59
77
V GS = -10V, I D = -4.2A
Static Drain-Source On-Resistance
R DS (ON)
??
73
95
m ?
V GS = -4.5V, I D = -4A
??
115
150
V GS = -2.5V, I D = -3A
Forward Transconductance
Source-Drain Diode Forward Voltage
g fs
V SD
?
?
8
0.8
?
-1.25
S
V
V DS = -5V, I D = -4A
V GS = 0V, I S = -3.0A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C iss
C oss
C rss
R G
?
?
?
??
432
87
62
4.04
864
174
124
??
pF
pF
pF
?
V DS = -15V, V GS = 0V
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 8)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q G
Q GS
Q GD
t d(on)
t r
t d(off)
t f
??
??
??
??
??
??
??
??
5.9
12
1.0
3.1
4.6
6.5
27.8
15.0
11.8
24
2.0
6.2
9.2
13.0
55.6
30.0
nC
ns
V DS = -15V, V GS = -4.5V, I D = -4.0A
V DS = -15V, V GS = -10V, I D = -4.0A
V DS = -15V, V GS = -4.5V, I D = -4.0A
V DS = -15V, V GS = -10V,
I D = -1A, R G = 6.0 ?
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing
DMP3130L
Document number: DS31524 Rev. 6 - 2
2 of 6
www.diodes.com
October 2013
? Diodes Incorporated
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