参数资料
型号: DMP4015SPS-13
厂商: Diodes Inc
文件页数: 3/6页
文件大小: 0K
描述: MOSFET P-CH 40V 8.5A POWERDI
标准包装: 1
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 40V
电流 - 连续漏极(Id) @ 25° C: 8.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 11 毫欧 @ 9.8A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 47.5nC @ 5V
输入电容 (Ciss) @ Vds: 4234pF @ 20V
功率 - 最大: 1.3W
安装类型: 表面贴装
封装/外壳: 8-PowerTDFN
供应商设备封装: PowerDI5060-8(4.9x5.8)
包装: 标准包装
其它名称: DMP4015SPS-13DIDKR
DMP4015SPS
30
30
25
-V GS =4.0V
-V GS =3.5V
25
20
15
10
5
-V GS =4.5V
-V GS =10V
-V GS =3.0V
20
15
10
5
0
0
0.5 1 1.5
-V DS , DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
2
0
0
0.5 1 1.5 2 2.5 3 3.5 4 4.5
-V GS , GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
5
0.02
0.02
-V GS = 4.5V
T A = 125 ? C
T A = 150 ? C
0.015
0.015
T A = 85 ? C
0.01
0.005
0.01
0.005
T A = 25 ? C
T A = -55 ? C
0
0
5 10 15 20 25
30
0
0
5
10
15
20
25
30
1.6
-I D , DRAIN SOURCE CURRENT
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.02
-I D , DRAIN SOURCE CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
1.4
1.2
1
0.016
0.012
0.008
-V GS = 4.5V
-I D = 5.0A
V GS = 10V
I D = 10A
0.8
0.6
-50 -25 0 25 50 75 100 125 150
T J , JUNCTION TEMPERATURE ( ? C)
Fig. 5 On-Resistance Variation with Temperature
POWERDI is a registered trademark of Diodes Incorporated
0.004
0
-50 -25 0 25 50 75 100 125 150
T J , JUNCTION TEMPERATURE ( ? C)
Fig. 6 On-Resistance Variation with Temperature
DMP4015SPS
Document number: DS35518 Rev. 9 - 2
3 of 6
www.diodes.com
November 2013
? Diodes Incorporated
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