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| 型号： | DMS3012SFG-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N CH 30V POWERDI 3333-8 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 12A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10 毫欧 @ 13.5A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 14.7nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4310pF @ 15V |
| 功率 - 最大： | 890mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerWDFN |
| 供应商设备封装： | PowerDI3333-8 |
| 包装： | 标准包装 |
| 其它名称： | DMS3012SFG-7DIDKR |
DMS3012SFG
Marking Information
N12 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 11 = 2011)
N12
WW = Week code (01 ~ 53)
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
±20
Units
V
V
Continuous Drain Current (Note 6) V GS = 10V
Continuous Drain Current (Note 6) V GS = 4.5V
Steady
State
t < 10s
Steady
State
t < 10s
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
I D
I D
I D
I D
12
9.5
16.0
12.7
9.5
7.5
13.0
10.3
A
A
A
A
Pulsed Drain Current (10 μ s pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current (Note 7) L = 0.1mH
Repetitive Avalanche Energy (Note 7) L = 0.1mH
I DM
I S
I AR
E AR
90
3.5
17
43
A
A
A
mJ
Thermal Characteristics
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
T A = +25°C
T A = +70°C
Steady state
t < 10s
T A = +25°C
T A = +70°C
Steady State
t < 10s
P D
R θ JA
P D
R θ JA
R θ JC
T J, T STG
0.89
0.55
145
74
2.2
1.3
58
31
11
-55 to +150
W
°C/W
W
°C/W
°C
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I AR and E AR rating are based on low frequency and duty cycles to keep T J = +25°C
POWERDI is a registered trademark of Diodes Incorporated.
DMS3012SFG
Document number: DS35441 Rev. 7 - 2
2 of 8
www.diodes.com
October 2012
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMS3014SFG-7 | MOSF N CH 30V 9.5A POWERDI3333-8 |
| DMS3014SSS-13 | MOSFET N-CH 30V 11A SO8 |
| DMS3015SSS-13 | MOSFET N-CH 30V 11A SO8 |
| DMS3016SFG-13 | MOSFET N-CH 30V 7A PWRDI3333-8 |
| DMS3016SSS-13 | MOSFET N-CH 30V 9.8A SO8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMS3014SFG-7 | 功能描述:MOSFET MOSFET BVDSS: 25V-30 PowerDI3333-8 T&R 2K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMS3014SSS | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE |
| DMS3014SSS-13 | 功能描述:MOSFET DIOFET MOSFETN-CHAN ENH MDE SCHOT DIODE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMS3015SSS | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE |
| DMS3015SSS-13 | 功能描述:MOSFET MOSFET N-CHAN RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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