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| 型号： | DMS3016SFG-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 7A PWRDI3333-8 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，肖特基，金属氧化物! |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 13 毫欧 @ 11.2A，10V |
| Id 时的 Vgs(th)（最大）： | 2.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 44.6nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1886pF @ 15V |
| 功率 - 最大： | 980mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerVDFN |
| 供应商设备封装： | PowerDI3333-8 |
| 包装： | 标准包装 |
| 其它名称： | DMS3016SFG-13DIDKR |
DMS3016SFG
Marking Information
S30 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 09 = 2009)
S30
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
WW = Week code (01 ~ 53)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
±12
Units
V
V
Continuous Drain Current (Note 5) V GS = 10V
Continuous Drain Current (Note 5) V GS = 4.5V
Continuous Drain Current (Note 6) V GS = 10V
Continuous Drain Current (Note 6) V GS = 4.5V
Pulsed Drain Current (10us pulse, duty cycle=1%)
Avalanche Current (Note 7)
Repetitive Avalanche Energy (Note 7) L = 0.3mH
Steady
State
Steady
State
Steady
State
Steady
State
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
I D
I D
I D
I D
I DM
I AR
E AR
7.0
5.5
6.4
5.1
10.2
8.1
9.3
7.4
80
13
24
A
A
A
A
A
A
mJ
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 6)
P D
R θ JA
R θ JC
T J, T STG
0.98
2.08
127
60
3.42
-55 to +150
W
°C/W
°C/W
°C
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7 .I AR and E AR rating are based on low frequency and duty cycles to keep T J = +25°C
I D W =1ms
I D W =100μs
1,000
100
R DS(ON)
Limited
(A) @P
(A) @P
100
90
80
Single Pulse
R θ JA = 54 ° C/W
R θ JA(t) = r (t) * R θ JA
10
I D (A) @P W =10ms
I D (A) @ DC
70
60
50
T J - T A = P * R θ JA(t)
1
I D (A) @P W =10s
I D (A) @P W =1s
40
30
0.1
T J(MAX) = 150 ° C
T A = 25 ° C
Single Pulse
I D (A) @P W =100ms
I D (A) @
P W =10μs
20
10
0.01
0.01
0.1 1 10
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 SOA, Safe Operation Area
100
0
0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 2 Single Pulse Maximum Power Dissipation
POWERDI is a registered trademark of Diodes Incorporated.
DMS3016SFG
Document number: DS35434 Rev. 7 - 2
2 of 7
www.diodes.com
October 2012
? Diodes Incorporated
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| DMS3016SFG-7 | 功能描述:MOSFET N-CH 30V 7A PWRDI3333-8 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| DMS3016SSS | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE |
| DMS3016SSS-13 | 功能描述:MOSFET DIOFET MOSFETN-CHAN ENH MDE SCHOT DIODE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMS3016SSSA | 制造商:Diodes Incorporated 功能描述:MOSFET N CH W DIODE 30V 9.8A SO8 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, W DIODE, 30V, 9.8A, SO8 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, W DIODE, 30V, 9.8A, SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:9.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.009ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.54W ;RoHS Compliant: Yes |
| DMS3016SSSA-13 | 功能描述:MOSFET MOSFET BVDSS: 25V-30 SO-8,2.5K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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