参数资料
型号: DMS3016SSSA-13
厂商: Diodes Inc
文件页数: 3/6页
文件大小: 0K
描述: MOSFET N-CH SCHOT 30V 9.8A SO-8
标准包装: 1
FET 型: MOSFET N 通道,肖特基,金属氧化物!
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 9.8A
开态Rds(最大)@ Id, Vgs @ 25° C: 13 毫欧 @ 9.8A,10V
Id 时的 Vgs(th)(最大): 2.3V @ 250µA
闸电荷(Qg) @ Vgs: 43nC @ 10V
输入电容 (Ciss) @ Vds: 1849pF @ 15V
功率 - 最大: 1.54W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SO
包装: 标准包装
其它名称: DMS3016SSSA-13DIDKR
DMS3016SSSA
30
V GS = 4.5V
30
25
V GS = 4.0V
25
V DS = 5V
V GS = 3.5V
20
15
V GS = 3.0V
20
15
10
V GS = 2.5V
10
V GS = 150°C
V GS = 125°C
5
5
V GS = 85°C
V GS = 25°C
0
V GS = 2.0V
V GS = 2.2V
0
V GS = -55°C
0
0.5 1 1.5
2
0
0.5
1 1.5 2 2.5
3
0.05
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
0.04
V GS , GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
V GS = 4.5V
0.04
0.03
0.03
V GS = 2.5V
0.02
0.02
T A = 150°C
T A = 125°C
T A = 85°C
0.01
0
V GS = 4.5V
V GS = 10V
0.01
0
T A = 25°C
T A = -55°C
0
5
10
15
20
25
30
0
5
10 15 20 25
30
1.6
1.4
I D , DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
V GS = 4.5V
I D = 10A
V GS = 10V
I D = 20A
0.03
0.02
I D , DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
1.2
V GS = 4.5V
1.0
0.8
0.01
I D = 10A
V GS = 10V
I D = 20A
0.6
-50
-25 0 25 50 75 100 125 150
0
-50
-25 0 25 50 75 100 125 150
T A , AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
T A , AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
DMS3016SSSA
Document number: DS35073 Rev. 1 - 2
3 of 6
www.diodes.com
October 2010
? Diodes Incorporated
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