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参数资料
| 型号： | DS1200S |
| 厂商： | MAXIM INTEGRATED PRODUCTS INC |
| 元件分类： | Static RAM |
| 英文描述： | 128 X 8 NON-VOLATILE SRAM, 125 ns, PDSO16 |
| 封装： | 0.300 INCH, SOIC-16 |
| 文件页数： | 3/8页 |
| 文件大小： | 272K |
| 代理商： | DS1200S |
DS1200
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ADDRESS/COMMAND
Each memory transfer consists of a 3-byte input called the address/command. The address/command is
shown in Figure 2. As defined, the first byte of the address/command specifies whether the memory is
written or read. If any one of the bits of the first byte of the address/command fail to meet the exact
pattern of read or write, the cycle is aborted and all future inputs to the tag are ignored until RST is
brought low and then high again to begin a new cycle. The 8-bit pattern for read is 10011101. The second
byte of the address/command describes address inputs A0 in bit 0 through A6 in bit 6. Bit 7 of the second
byte of the address/command word must be set to logic 0. If bit 7 does not equal logic 0, the cycle is
aborted and all future inputs to the tag are ignored until RST is brought low and then high again to begin
a new cycle. The third byte of the address/command (bits 0 through 6) must be set to logic 0 or the cycle
is aborted and all future inputs are ignored until RST is brought low and then high again to begin a new
cycle. Bit 7 of byte 3 of the address/command is used along with address bits A0 through A6 to define
burst mode. When A0 through A6 equals logic 0 and bit 7 of byte 3 of the address command equals logic
1, the tag will enter the burst mode after the address/command sequence is complete.
BURST MODE
Burst mode is when all address bits (A0 to A6) of the address/command are set to logic 0 and bit 7 of byte
3 to logic 1. The burst mode causes 128 consecutive bytes to be read or written. Burst mode terminates
when the RST input is driven low.
RESET AND CLOCK CONTROL
All data transfers are initiated by driving the RST input high. The RST input serves three functions.
First, RST turns on the control logic, which allows access to the shift register for the address/command
sequence. Second, the RST signal provides a power source for the cycle to follow. To meet this
requirement, a drive source for RST of 2mA at 3.8V is required. However if the VCC pin is connected to
a 5V source within nominal limits, then the RST pin is not used as a source of power and input levels
revert to normal VIH and VIL inputs with a drive current requirement of 500mA. Finally, the RST signal
provides a method of terminating either single byte or multiple byte data transfers. A clock cycle is a
sequence of falling edge followed by a rising edge. For data inputs, the data must be valid during the
rising edge of the clock cycle. Address/command bits and data bits are input on the rising edge of the
clock and data bits are output on the falling edge of the clock. All data transfer terminates if the RST
input is low and DQ pin goes to a high-impedance state. When data transfer to the serial RAM chip is
terminated using, RST , the transition of RST must occur while the clock is at high level to avoid
disturbing the last bit of data. Data transfer is illustrated in Figure 3.
DATA INPUT
Following the 24 clock cycles that input an address/command, a data byte is input on the rising edge of
the next eight clock cycles, assuming that the read/write and write/read bits are properly set (for data
input byte 1, bit 0 = 1; bit 1 = 0; bit 2 = 1; bit 3 = 1; bit 4 = 1; bit 5 = 0; bit 6 = 0; bit 7 = 1).
DATA OUTPUT
Following the 24 clock cycles that input the read mode, a data byte is output on the falling edge of the
next eight clock cycles (for data output byte 1, bit 0 = 0; bit 1 = 1; bit 2 = 0; bit 3= 0; bit 4 = 0; bit 5 = 1;
bit 6 = 1; bit 7 = 0).
相关PDF资料 |
PDF描述 |
|---|---|
| DS1200 | 128 X 8 NON-VOLATILE SRAM, 125 ns, PDIP10 |
| DS1211SN | SPECIALTY MICROPROCESSOR CIRCUIT, PDSO20 |
| DS1211 | SPECIALTY MICROPROCESSOR CIRCUIT, PDIP20 |
| DS1211S | SPECIALTY MICROPROCESSOR CIRCUIT, PDSO20 |
| DS1211N | SPECIALTY MICROPROCESSOR CIRCUIT, PDIP20 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1200S+ | 功能描述:静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| DS1200S+C02 | 制造商:Maxim Integrated Products 功能描述:ELEC TAG -16P SOIC LEAD FREE - Rail/Tube |
| DS1200S+T&R | 功能描述:静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| DS1200SN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NOVRAM|128X8|CMOS|SOP|16PIN|PLASTIC |
| DS1201 | 功能描述:IC SRAM 1KBIT 100NS 5SIP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN（2x3） 包装:管件 产品目录页面:1445 (CN2011-ZH PDF) |
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