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参数资料
| 型号： | DS1200S |
| 厂商： | MAXIM INTEGRATED PRODUCTS INC |
| 元件分类： | Static RAM |
| 英文描述： | 128 X 8 NON-VOLATILE SRAM, 125 ns, PDSO16 |
| 封装： | 0.300 INCH, SOIC-16 |
| 文件页数： | 7/8页 |
| 文件大小： | 272K |
| 代理商： | DS1200S |
DS1200
7 of 7
AC ELECTRICAL CHARACTERISTICS
(0C to +70C; VCC = 5V ± 10%)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Data to CLK Setup
tDC
35
ns
3, 9
Data to CLK Hold
tCDH
40
ns
3, 9
Data to CLK Delay
tCDD
125
ns
3, 4, 6, 9
CLK Low Time
tCL
125
ns
3, 9
CLK High Time
tCH
125
ns
3, 9
CLK Frequency
fCLK
DC
4.0
MHz
3, 9
CLK Rise and Fall
tR, tF
500
ns
9
RST
to Clock Setup
tCC
1
s
3, 9
CLK to RST Hold
tCCH
40
ns
3, 9
RST
Inactive Time
tCWH
125
ns
3, 9, 14
RST
to I/O High-Z
tCDZ
50
ns
3, 9
NOTES:
1) All voltages and resistances are referenced to ground.
2) Input levels apply to CLK, DQ, and RST while VCC is not connected to the tag, then RST input
reverts to VIHE.
3) Measured at VIH = 2.0 or VIL = 0.8V and 10ns maximum rise and fall time.
4) Measured at VOH = 2.4V and VOL = 0.4V.
5) For CLK, DQ, RST , and VCC at 5V.
6) Load capacitance = 50pF.
7) Applies to RST when VCC < 3.8V.
8) Measured with outputs open.
9) Measured at VIH of RST greater than or equal to 3.8V when RST supplies power.
10) Logic 1 maximum is VCC + 0.3V if the VCC pin supplies power and RST +0.3V if the RST pin
supplies power.
11) RST logic 1 maximum is VCC + 0.3V if the VCC pin supplies power and 5.5V maximum if RST
supplies power.
12) Each DS1200 is marked with a four-digit date code AABB. AA designates the year of manufacture.
BB designates the week of manufacture. The expected tDR is defined as starting at the date of
manufacture.
13) Average AC RST current can be determined using the following formula:
ITOTAL = 2 + ILOAD DC + (4 x 10
-3)(CL + 140)f
ITOTAL and ILOAD are in mA; CL is in pF; f is in MHz.
Applying the above formula, a load capacitance of 50pF running at a frequency of 4.0MHz gives an
ITOTAL current of 5mA.
14) When RST is supplying power, tCWH must be increased to 100ms.
相关PDF资料 |
PDF描述 |
|---|---|
| DS1200 | 128 X 8 NON-VOLATILE SRAM, 125 ns, PDIP10 |
| DS1211SN | SPECIALTY MICROPROCESSOR CIRCUIT, PDSO20 |
| DS1211 | SPECIALTY MICROPROCESSOR CIRCUIT, PDIP20 |
| DS1211S | SPECIALTY MICROPROCESSOR CIRCUIT, PDSO20 |
| DS1211N | SPECIALTY MICROPROCESSOR CIRCUIT, PDIP20 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1200S+ | 功能描述:静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| DS1200S+C02 | 制造商:Maxim Integrated Products 功能描述:ELEC TAG -16P SOIC LEAD FREE - Rail/Tube |
| DS1200S+T&R | 功能描述:静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| DS1200SN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NOVRAM|128X8|CMOS|SOP|16PIN|PLASTIC |
| DS1201 | 功能描述:IC SRAM 1KBIT 100NS 5SIP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN（2x3） 包装:管件 产品目录页面:1445 (CN2011-ZH PDF) |
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